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| SMD Type PNP Silicon Transistor 2SA1413-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage: VCEO=-600V High speed:tr 1.0is +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) *1 Total power Dissipation (Ta=25 Junction Tmeperature Storage Temperature *1 pw 10ms,Duty Cycle 50% *2 When mounted on ceramic substrate of 7.5cm2X0.7mm ) *2 Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -600 -600 -7 -1 -2 2 150 -55 to 150 Unit V V V A A W 3.80 www.kexin.com.cn 1 SMD Type 2SA1413-Z Electrical Characteristics Ta = 25 Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain* Collector Saturation Voltage * Base Saturation Voltage * Gain Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall time * PW 350is,Duty Cycle 2% Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Testconditons VCB=-600V,IE=0 VEB=-7V,IC=0 VCE=-5V,IC=-0.1A VCE=-5V,IC=-0.5A IC=-0.3A,IB=-60mA IC=-0.3A,IB=-60mA VCE=-10V,IE=-50mA VCB=-10V,IE=0,f=1.0MHz IC=-0.5A,RL=500U IB1=-IB2=-0.1A,VCC=-250V Transistors Min Typ Max -10 -10 Unit iA iA 30 5 58 19 -0.28 -0.85 28 42 0.1 3.5 0.08 120 -1 -1.2 V V MHz pF 0.5 5.0 0.5 is hFE Classification Marking hFE M 30 to 60 L 40 to 80 K 60 to 120 2 www.kexin.com.cn |
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