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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6739 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 350V(Min) *High Switching Speed *Low Saturation Voltage APPLICATIONS *Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCEV VCEX VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-Emitter Voltage-VBE= -1.5V Collector-Emitter Voltage-VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage VALUE 550 400 350 8 8 UNIT V V V Collector Current-Continuous Collector Current-Peak w w scs .i w 10 4 100 150 -65~150 .cn mi e V A A A Base Current-Continuous Collector Power Dissipation TC=25 Junction Temperature Storage Ttemperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV IEBO hFE fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 200mA; IB= 0 IC= 5A; IB= 1A IC= 8A; IB= 4A IC= 5A; IB= 1A VCEV= 550V;VBE(off)=-1.5V VCEV= 550V;VBE(off)=-1.5V;TJ= 100 VEB= 8V; IC= 0 IC= 5A ; VCE= 3V MIN 350 2N6739 MAX UNIT V 1 2 1.6 0.1 1.0 2 10 10 40 60 V V V mA mA Switching Times; Resistive Load td tr ts tf Delay Time Rise Time Storage Time Fall Time w w scs .i w IC= 0.2A; VCE= 10V, ftest= 1MHz .cn mi e MHz 0.1 0.4 2.5 0.5 s s s s IC= 5A; IB1= -IB2= 1A,VCC= 125V; tp= 20s, Duty Cycle1% isc Websitewww.iscsemi.cn |
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