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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5970 DESCRIPTION *With TO-3 package *Low collector saturation voltage *High power dissipations APPLICATIONS *Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 15 30 5 150 150 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5970 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=7A ;IB=0.7A IC=15A; IB=3.75A IC=15A; IB=3.75A VCE=30V; IB=0 VCE=80V; VBE(off)=1.5V TC=150 VCB=80V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=1.5V IC=15A ; VCE=4V IC=1A;VCE=10V 20 4 4 MHz MIN 60 1.0 4.0 2.5 1.0 0.5 5.0 0.5 1.0 60 TYP. MAX UNIT V V V V mA mA mA mA SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5970 Fig.2 outline dimensions (unindicated tolerance:0.10mm) 3 |
Price & Availability of 2N5970
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