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 BPV22F
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
* Package type: leaded * Package form: side view * Dimensions (in mm): 4.5 x 5 x 6 * Radiant sensitive area (in mm2): 7.5 * High radiant sensitivity * Daylight blocking filter matched with 940 nm emitters
94 8633
* Fast response times * Angle of half sensitivity: = 60 * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
DESCRIPTION
BPV22F is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter bandwdith is matched with 900 nm to 950 nm IR emitters. The lens achieves 80 % of sensitivity improvement in comparison with flat package.
APPLICATIONS
* High speed detector for infrared radiation * Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters
PRODUCT SUMMARY
COMPONENT BPV22F Note Test condition see table "Basic Characteristics" Ira (A) 80 (deg) 60 0.5 (nm) 870 to 1050
ORDERING INFORMATION
ORDERING CODE BPV22F Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM Side view
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t5s Connected with Cu wire, 0.14 mm2 Tamb 25 C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW C C C C K/W
www.vishay.com 350
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81508 Rev. 1.5, 08-Sep-08
BPV22F
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Serial resistance Open circuit voltage Temperature coefficient of Vo Short circuit current Reverse light current Temperature coefficient of Ira Absolute spectral sensitivity Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Quantum efficiency Noise equivalent power Detectivity Rise time Fall time Cut-off frequency Note Tamb = 25 C, unless otherwise specified = 950 nm VR = 10 V, = 950 nm VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm VR = 12 V, RL = 1 k, = 870 nm VR = 12 V, RL = 1 k, = 950 nm TEST CONDITION IF = 50 mA IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR= 12 V, f = 1 MHz Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR = 10 V SYMBOL VF V(BR) Iro CD RS Vo TKVo Ik Ira TKIra s() s() 55 60 2 70 400 370 - 2.6 75 80 0.1 0.35 0.6 60 950 870 to 1050 90 4 x 10-14 6 x 1012 100 100 4 1 30 MIN. TYP. 1 MAX. 1.3 UNIT V V nA pF mV mV/K A A %/K A/W A/W deg nm nm % W/ Hz cmHz/W ns ns MHz MHz
VR = 5 V, = 870 nm VR = 5 V, = 950 nm
p 0.5 NEP D* tr tf fc fc
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
I ra rel - Relative Reverse Light Current
1000
Iro - Reverse Dark Current (nA)
1.4
1.2
100
VR = 5 V = 950 nm
1.0
10
0.8
VR = 10 V 1 20 40 60 80 100
0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (C)
94 8403
Tamb - Ambient Temperature (C)
94 8409
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81508 Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com 351
BPV22F
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
S ( ) rel - Relative Spectral Sensitivity
1000
I ra - Reverse Light Current (A)
1.2 1.0 0.8 0.6 0.4 0.2 0 750
100
10 VR = 5 V = 950 nm 1
0.1 0.01
94 8411
0.1
1
10
850
950
1050
1150
E e - Irradiance (mW/cm2)
94 8408
- Wavelength (nm)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
100 I ra - Reverse Light Current (A)
1 mW/cm2 = 950 nm 0.5 mW/cm2 0.2 mW/cm
2
0
10
20 30
- Angular Displacement
Srel - Relative Sensitivity
40 1.0 0.9 0.8 0.7 50 60 70 80
10
0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2
1 0.1
94 8412
1
10
100
94 8413
0.6
0.4
0.2
0
VR - Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
80 CD - Diode Capacitance (pF)
60
E=0 f = 1 MHz
40
20
0 0.1
948407
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
www.vishay.com 352
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81508 Rev. 1.5, 08-Sep-08
BPV22F
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
5
+ 0.1 - 0.3
3.2
0.15
0.2
4.5
0.2
(2.4)
2.5
< 0.7
0.3
6
0.3
18.8
0.5
8.6
R 2.25 (sphere)
0.65
+ 0.1 - 0.2
0.1 3.4 + 0.3 -
Area not plane
A
C
0.45
+ 0.2 - 0.1
0.4 + 0.15
2.54 nom.
1.1
0.2
technical drawings according to DIN specifications
Drawing-No.: 6.544-5199.01-4 Issue: 2; 19.06.01
95 11475
Document Number: 81508 Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com 353
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1


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Vishay Intertechnologies Photodiode, 50Ma, Silicon Pin; No. Of Pins:2Pins; Diode Case Style:Radial Leaded; Wavelength Of Peak Sensitivity:950Nm; Angle Of Half Sensitivity ±:60°; Dark Current:2000Pa; Operating Temperature Min:-40°C; Operating Temperature Rohs Compliant: Yes |Vishay BPV22F 500: USD0.454
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