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  Datasheet File OCR Text:
 SMD Type
Low VCE(sat) Transistor 2SD2118
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
Features
Low VCE(sat). Excellent DC current gain characteristics.
+0.15 6.50-0.15 +0.2 5.30-0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
NPN silicon transistor.
+0.2 9.70 -0.2
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation TC = 25 Junction temperature Storage temperature * Pw=10ms. Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 50 20 6 5 10 10 1 10 150 -55 to +150 Unit V V V A (DC) A(Pulse)* A W W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50iA IC=1mA IE=50iA VCB=40V VEB=5V 0.3 120 150 30 Testconditons Min 50 20 6 0.5 0.5 1.0 390 MHz pF Typ Max Unit V V V iA iA V
VCE(sat) IC=4 A, IB=0.1A hFE fT Cob VCE=2V, IC=0.5A VCE=6V, IE= -50mA, f=100MHz VCB=20V, IE=0A, f=1MHz
hFE Classification
Rank hFE Q 120 270 R 180 390
3.80
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DigiKey

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2SD2118TLQ
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