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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION *With TO-220F package *Complement to type 2SB1274 *High reliability. *High breakdown voltage *Low saturation voltage. *Wide area of safe operation APPLICATIONS *60V/3A low-frequency power amplifier *General power amplifier applications PINNING
PIN 1 2 3 Base Collector Emitter DESCRIPTION
2SD1913
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 60 6 3 8 20 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; IE=0 IC=5mA; RBE= IE=1mA; IC=0 IC=2A ; IB=0.2A IC=0.5A ; VCE=5V VCB=40V;IE=0 VEB=4V;IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V IE=0 ; VCB=10V; f=1MHz 70 20 100 40 MIN 60 60 6 0.4 0.8 TYP.
2SD1913
MAX
UNIT V V V
1.0 1.0 0.1 0.1 280
V V mA mA
MHz pF
hFE-1 classifications Q 70-140 R 100-200 S 140-280
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1913
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1913
4

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Price & Availability of 2SD1913

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SD1913R 74AK4185	onsemi	2Sd1913R, Single Bipolar Transistors \|Onsemi 2SD1913R	10000: USD0.133 2500: USD0.137 1000: USD0.169	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SD1913R 2156-2SD1913R-ND	Rochester Electronics LLC	NPN SILICON TRANSISTOR	2049: USD0.15	64702
2SD1913S 2156-2SD1913S-ON-ND	Rochester Electronics LLC	TRANS NPN 60V 3A TO220ML	1665: USD0.18	25145

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SD1913	SANYO Semiconductor Co Ltd	POWER BIPOLAR TRANSISTOR, 3A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN	45: USD3.9 5: USD4.5 1: USD9	71

Part #	Manufacturer	Description	Price	BuyNow Qty.
2SD1913S	SANYO Semiconductor Co Ltd	2SD1913 - NPN Epitaxial Planar Silicon Transistor '	1000: USD0.1547 500: USD0.1638 100: USD0.1711 25: USD0.1784 1: USD0.182	3
2SD1913R	onsemi	2SD1913 - NPN Epitaxial Planar Silicon Transistor '	1000: USD0.1257 500: USD0.1331 100: USD0.139 25: USD0.1449 1: USD0.1479	64702
2SD1913S	onsemi	2SD1913 - NPN Epitaxial Planar Silicon Transistor '	1000: USD0.1547 500: USD0.1638 100: USD0.1711 25: USD0.1784 1: USD0.182	25145

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