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| QRE1113GR -- SMT Reflective Object Sensor January 2008 QRE1113GR SMT Reflective Object Sensor Features Phototransistor output Tape and reel packaging No contact surface sensing Miniature package Lead form style: Gull Wing Package Dimensions 2.90 2.50 1.00 4 3 0.94 C L 0.60 0.40 1.80 C L 3.60 3.20 0.94 1 2 30 Schematic 1.70 1.50 0.61 Nom. (4x) 4.80 4.40 1.10 0.90 1 2 3 4 PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER Notes: 1. Dimensions for all drawings are in millimeters. 2. Tolerance of 0.15mm on all non-nominal dimensions (c)2002 Fairchild Semiconductor Corporation QRE1113GR Rev. 1.2.0 www.fairchildsemi.com QRE1113GR -- SMT Reflective Object Sensor Absolute Maximum Ratings (TA = 25C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOPR TSTG TSOL-I TSOL-F EMITTER IF VR IFP PD SENSOR VCEO VECO IC PD Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1) 30 5 20 50 V V mA mW Continuous Forward Current Reverse Voltage Peak Forward Power Current(5) Dissipation(1) 50 5 1 75 mA V A mW Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Rating -40 to +85 -40 to +90 240 for 5 sec 260 for 10 sec Units C C C C Electrical/Optical Characteristics (TA = 25C unless otherwise specified) Symbol VF IR PE ID COUPLED IC(ON) VCE (SAT) tr tf On-State Collector Current Saturation Voltage Rise Time Fall Time VCC = 5V, IC(ON) = 100A, RL = 1k 20 20 IF = 20mA, VCE = 5V(6) 0.10 0.40 0.3 mA V s Parameter Forward Voltage Reverse Leakage Current Peak Emission Wavelength Collector-Emitter Dark Current Test Conditions IF = 20mA VR = 5V IF = 20mA VCE = 20V, IF = 0mA Min. Typ. 1.2 940 Max. 1.6 10 Units V A nm INPUT DIODE OUTPUT TRANSISTOR 100 nA Notes: 1. Derate power dissipation linearly 1.00mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) from housing. 5. Pulse conditions: tp = 100s; T = 10ms. 6. Measured using an aluminum alloy mirror at d = 1mm. (c)2002 Fairchild Semiconductor Corporation QRE1113GR Rev. 1.2.0 www.fairchildsemi.com 2 QRE1113GR -- SMT Reflective Object Sensor Typical Performance Curves IC (ON)- NORMALIZED COLLECTOR CURRENT 1.0 1.0 0.8 IC (ON) - COLLECTOR CURRENT (mA) IF = 10 mA VCE = 5 V TA = 25C 0.8 d0 0.6 0.6 0.4 Sensing Object: White Paper (90% reflective) 0.2 Mirror 0.4 0.2 0.0 0 1 2 3 4 5 0.0 0 4 8 12 16 20 d-DISTANCE (mm) IF - FORWARD CURRENT (mA) Fig. 1 Normalized Collector Current vs. Distance between device and reflector Fig. 2 Collector Current vs. Forward Current IC (ON) - COLLECTOR CURRENT (mA) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 d = 1 mm, 90% reflection TA = 25C ICEO - NORMALIZED DARK CURRENT 2.0 102 Normalized to: VCE = 10 V TA = 25C 101 VCE = 10 V VCE = 5 V IF = 25mA IF =20mA IF =15mA IF =10mA IF =5mA 100 10-1 0.2 0.0 0.1 1 10 10-2 25 40 55 70 85 VCE - COLLECTOR EMITTER VOLTAGE (V) TA - Ambient Temperature (C) Fig. 3 Collector Current vs. Collector to Emitter Voltage Fig. 4 Collector Emitter Dark Current (Normalized) vs. Ambient Temperature (c)2002 Fairchild Semiconductor Corporation QRE1113GR Rev. 1.2.0 www.fairchildsemi.com 3 QRE1113GR -- SMT Reflective Object Sensor Typical Performance Curves (Continued) 50 100 TA = 25C 40 VCC = 10 V tpw = 100 us T=1ms TA = 25C IC = 0.3 mA IF - FORWARD CURRENT (mA) RISE AND FALL TIME (us) tf tr 10 tf tr 30 20 IC = 1 mA 10 0 1.0 1.1 1.2 1.3 1.4 1.5 1 0.1 1 10 VF - FORWARD VOLTAGE (V) RL - LOAD RESISTANCE (K) Fig. 6 Forward Current vs. Forward Voltage Fig. 7 Rise and Fall Time vs. Load Resistance 3.0 VF - FORWARD VOLTAGE (V) RELATIVE RADIANT INTENSITY 2.5 1.0 0.9 0.8 2.0 IF = 50 mA IF = 20 mA 1.0 IF = 10 mA 1.5 0.7 0.5 0.0 -40 -20 0 20 40 60 80 0.6 0.4 0.2 0 0.2 0.4 0.6 TA - AMBIENT TEMPERATURE (C) ANGULAR DISPLACEMENT Fig. 8 Forward Voltage vs. Ambient Temperature Fig. 8 Radiation Diagram (c)2002 Fairchild Semiconductor Corporation QRE1113GR Rev. 1.2.0 www.fairchildsemi.com 4 QRE1113GR -- SMT Reflective Object Sensor Taping Dimensions Progressive Direction 2.00.05 4.0 o1.5 0.25 1.75 5.50.05 12.00.3 4.75 3.73 8.0 1.98 General tolerance 0.1 Dimensions in mm (c)2002 Fairchild Semiconductor Corporation QRE1113GR Rev. 1.2.0 www.fairchildsemi.com 5 QRE1113GR -- SMT Reflective Object Sensor TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTMe-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM -3 SuperSOTTM -6 SuperSOTTM -8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation QRE1113GR Rev. 1.2.0 www.fairchildsemi.com 6 |
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