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| SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Transistors IC Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS(th) Direct interface to C-MOS, TTL,etc. High-speed switching No secondary breakdown. 6.50 +0.2 -0.2 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 gate 2,4 drain 3 source Absolute Maximum Ratings Ta = 25 Parameter drain-source voltage gate-source voltage (open drain) DC drain current peak drain current total power dissipation (up to Tamb = 25 *) storage temperature range junction temperature from junction to ambient* Symbol -VDS VGSO -ID -IDM Ptot Tstg Tj Rth j-a Rating 240 20 180 720 1.5 -65 to 150 150 83.3 K/W Unit V V mA mA W * Transistor mounted on an epoxy printed circuit board, 40X40 X 1.5 mm, mounting pad for the drain tab minimum 6 cm2. +0.15 1.65-0.15 www.kexin.com.cn 1 SMD Type KSP92 Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage Transistors IC unless otherwise specified. Symbol -V(BR)DSS -IDSS IGSS -VGS(th) -VGS Testconditons -ID = 10iA; VGS = 0 -VDS = 200 V; VGS = 0 VGS = 20 V; VDS = 0 -ID = 1 mA; VGS = VDS -ID = 50 mA; -VDS = 5 V -ID = 180 mA; -VGS = 10 V 0.8 0.8 10 Min 240 1 100 2 2.8 20 18 20 100 200 65 20 6 5 20 90 30 15 10 30 mS pF pF pF ns ns Typ Max Unit V mA nA V V drain-source on-resistance RDS(on) -ID = 100 mA; -VGS = 5 V -ID = 25 mA; -VGS = 2.8 V transfer admittance input capacitance output capacitance feedback capacitance turn-on time (see Figs 1 and 2) turn-off time (see Figs 1 and 2) |Yfs| Ciss Coss Crss ton toff -ID = 180 mA; -VDS = 25 V -VDS = 25 V; VGS = 0; f = 1 MHz -VDS = 25 V; VGS = 0; f = 1 MHz -VDS = 25 V; VGS = 0; f = 1 MHz -ID = 250 mA; -VDD = 50 V;-VGS = 0 to 10 V -ID = 250 mA; -VDD = 50 V;-VGS = 0 to 10 V Fig.1 Switching times test circuit. Fig.2 Input and output waveforms. 2 www.kexin.com.cn |
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