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AON6450L
N-Channel SDMOS TM Power Transistor
General Description
The AON6450L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary
Parameter VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 52A < 14.5m < 17.5m
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
D
Top View Fits SOIC8 footprint !
G S
DFN5X6 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation
B C C
Maximum 100 25 52 33 110 9 7 41 84 83 33 2.3 1.4 -55 to 150
Units V V A
TC=25C TC=100C TA=25C TA=70C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W C
TC=100C TA=25C TA=70C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
t 10s Steady-State Steady-State
RJA RJC
Typ 14 40 1
Max 17 55 1.5
Units C/W C/W C/W
Rev 0: January 2009
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AON6450L
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=7V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 2000 VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz 170 50 0.4 34 VGS=10V, VDS=50V, ID=20A 9 11 8 VGS=10V, VDS=50V, RL=2.5, RGEN=3 IF=20A, dI/dt=500A/s 17 75 Conditions ID=250A, VGS=0V VDS=100V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 2.8 110 12.1 22.8 14 52 0.7 1 52 2570 250 80 0.8 43 11.5 14 13.5 15 5 28.5 5 24 108 31 140 3100 330 120 1.2 52 14 17 19 14.5 27.5 17.5 3.4 Min 100 10 50 100 4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.
Rev 0: January 2009 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: January 2009
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AON6450L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
110 100 90 80 70 ID (A) ID(A) 60 50 40 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 Normalized On-Resistance 15 RDS(ON) (m) VGS=7V 14 13 VGS=10V 12 11 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) VGS=7V ID=20A VGS=10V ID=20A VGS=5.5V 6V 10V 7.5V 110 7V 6.5V 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125C 25C VDS=5V
17 5 2 10
30 ID=20A 25 RDS(ON) (m) 20 15 10 5 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25C 125C IS (A)
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 (Note E) VSD (Volts) Figure 6: Body-Diode Characteristics 125
40
Rev 0: January 2009
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Page 3 of 7
AON6450L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=50V ID=20A Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 0 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 100.0 10s Power (W) 400 350 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 10 20 60 Coss Crss
8
Ciss
VGS (Volts)
6
4
2
0
TJ(Max)=150C TC=25C
ID (Amps)
10.0 1.0 0.1 0.0 0.01
RDS(ON) limited DC TJ(Max)=150C TC=25C
10s 100s 1ms
300 250 200 150 100 50
17 5 2 10
0.1
1 10 VDS (Volts)
100
1000
0 0.0001
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
10 ZJC Normalized Transient Thermal Resistance
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
PD Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
T 10 100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: January 2009
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AON6450L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 IAR (A) Peak Avalanche Current 50 40 30 20 10 0 0.000001 TA=150C TA=125C TA=25C TA=100C 90 80 Power Dissipation (W) 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note F)
0.00001 0.0001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
60 50 Current rating ID(A)
10000
TA=25C
1000
Power (W)
40 30 20 10 0 0 25 50 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note F)
100
10
17 5 2 10
1 0.0001
0.01
1
100
10000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
0 18
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1 PD Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 Ton 10
0.01
T 100 1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 0: January 2009
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Page 5 of 7
AON6450L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
210 180 150 Qrr (nC) 120 90 60 30 0 0 5 10 15 20 25 30 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 210 180 150 Qrr (nC) 120 90 60 30 0 0 200 400 600 800 25C Irm 2 1000 Qrr 125C 25C Is=20A 125C 26 22 18 14 10 6 Irm (A) 40 35 30 trr (ns) 25 20 15 10 5 0 0 200 400 600 800 25C 125 S 0.5 25C 125C trr Is=20A 1.5 Irm 25C Qrr 25C 125C di/dt=800A/s 125C 26 24 22 20 Irm (A) 18 16 14 12 10 8 30 25 20 trr (ns) 15 10 5 0 0 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 2 S 0.8 25C 125C 0 0.4 di/dt=800A/s 125C 2 1.6 1.2
trr
25C
1
0 1000
di/dt (A/s) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A/s) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt
Rev 0: January 2009
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Page 6 of 7
S
S
AON6450L
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg Vgs
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
E AR= 1/2 LIAR Vds
2
BVDSS
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt I RM Vdd
Ig
Rev 0: January 2009
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Page 7 of 7

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