 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1295 DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *For TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION * Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1000 350 5 2 40 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1295 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 350 V V(BR)EBO VCEsat Emitter-base breakdown votage IE=1mA; IC=0 IC=2 A;IB=1A 5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=1A 1.5 V ICBO Collector cut-off current VCB=1000V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 0.1 mA hFE DC current gain IC=1.5A ; VCE=5V 3 13 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1295 Fig.2 Outline dimensions 3 |
Price & Availability of 2SC1295
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |