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S T M4472 S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0 N- Channel Enhancement Mode Field Effect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S S uper high dense cell design for low R DS (ON). ID 7A R DS (ON) ( m i ) Max 24 @ V G S = 10V 30 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol VDS VGS 25 C 70 C IDM IS PD Ta=70 C TJ, TS TG ID Limit 40 20 7 5.9 28 1.7 3 2.1 -55 to 150 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 R JA 40 C /W S T M4472 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS c Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 7A VGS =4.5V, ID= 5A VDS = 5V, VGS = 10V VDS = 5V, ID = 7A Min Typ C Max Unit 40 1 10 1 1.8 18 23 15 12.5 700 3 V uA uA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 24 m ohm 30 m ohm A S DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS c VDS =20 V, VGS = 0V f =1.0MHZ PF PF PF 140 80 13.4 12.5 43.3 8.5 13.5 6.7 1.8 2.4 S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 20V ID = 1 A VGS = 10V R GE N = 3.3 ohm VDS =20V, ID =7A,VGS =10V VDS =20V, ID =7A,VGS =4.5V VDS =20V, ID = 7 A VGS =4.5V 2 ns ns ns ns nC nC nC nC S T M4472 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit 0.78 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 45 VG S =10V 36 15 VG S =4.5V VG S =4V 12 ID, Drain C urrent(A) ID, Drain C urrent (A) -55 C 9 T j=125 C 6 25 C 3 0 0.0 27 VG S =3.5V 18 VG S =3V 9 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.7 1.4 2.1 2.8 3.5 4.2 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 48 1.75 R DS (ON), On-R es is tance Normalized 40 1.60 1.45 1.30 1.15 1.00 0.85 V G S =4.5V ID=5A V G S =10V ID=7A R DS (on) (m ) 32 V G S =4.5V 24 16 8 1 V G S =10V 1 4 8 12 16 20 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T M4472 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=7A Is , S ource-drain current (A) 50 10.0 5.0 125 C R DS (on) (m ) 40 125 C 30 20 10 0 75 C 25 C 75 C 25 C 0 2 4 6 8 10 1.0 0 0.25 0.50 0.75 1.00 1.25 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M4472 V G S , G ate to S ource V oltage (V ) 1200 1000 10 8 6 4 2 0 VDS =20V ID=7A C , C apacitance (pF ) 800 600 400 200 C rs s 0 0 5 10 15 C oss C is s 5 20 25 30 0 2 4 6 8 10 12 14 16 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 250 S witching T ime (ns ) ID, Drain C urrent (A) 50 30 10 RD ON S( )L im it 10 ms 100 60 Tf TD(off) Tr 10 1s DC 0m s TD(on) 10 1 V DS =20V ,ID=1A 0.1 0.03 1 1 V G S =10V VGS =10V S ingle P ulse T A=25 C 0.1 1 10 40 6 10 60 100 300 600 R g, G ate R es is tance () V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 9 Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T M4472 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45 A 0.008 TYP. e 0.05 TYP. B 0.016 TYP. A1 C H MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 6 S T M4472 SO-8 Tape and Reel Data SO-8 Carrier Tape unit: PACKAGE SOP 8N 150 A0 6.40 B0 5.20 K0 2.10 D0 1.5 (MIN) D1 1.5 + 0.1 - 0.0 E 12.0 0.3 E1 1.75 E2 5.5 0.05 P0 8.0 P1 4.0 P2 2.0 0.05 T 0.3 0.05 SO-8 Reel UNIT: TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R V 7 |
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