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AOD496A N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD496A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.
Features
VDS (V) =30V ID = 57A RDS(ON) < 9m RDS(ON) < 14m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
Top View D
TO-252 D-PAK
Bottom View
D
S G S
G
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation
B
Maximum 30 20 57 40 100 11 9 20 20 50 25 2.3 1.5 -55 to 175
Units V V A
TC=25C TC=100C TA=25C TA=70C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
Pulsed Drain Current C
A A mJ W W C
TC=100C TA=25C TA=70C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 18 44 2.4
Max 22 55 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD496A
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 600 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 200 40 0.4 9 VGS=10V, VDS=15V, ID=20A 4 1.6 1.5 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s 9 18 TJ=125C 1.2 100 7.4 11 11 43 0.7 1 50 750 245 70 0.8 11.5 5 2 2.5 5 3 18 3 11 23 13 28 980 365 100 1.4 14 6 2.4 3.5 9 13 14 1.7 Min 30 1 5 100 2.2 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The Power A dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial T J =25C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 pulses, duty cycle 0.5% max. s F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A Rev 1 : Feb-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD496A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V 80 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 Normalized On-Resistance 14 RDS(ON) (m) 12 10 8 6 4 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 VGS=10V VGS=4.5V 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 200 VGS=10V ID=20A 6V 50 7V 4.5V 40 ID(A) 4V 30 20 10 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125C 25C 60 VDS=5V
ID (A)
3.5 VGS=3V
17 5 2 VGS=4.5V 10
ID=20A
0 Temperature (C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E)
1.0E+02
30 ID=20A 25 RDS(ON) (m) IS (A) 20 125C 15 10 5 2 4 6 25C 8 10
1.0E+01
40 1.0E+00
1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 125C 25C
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD496A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 6 4 2 0 0 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 12 VDS=15V ID=20A Capacitance (pF) 1200 1000 Ciss 800 600 400 200 0 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30
VGS (Volts)
Coss
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 10s Power (W)
200 160 TJ(Max)=175C TC=25C
RDS(ON) limited DC TJ(Max)=175C TC=25C
0.1 1 VDS (Volts) 10
10s 100s 1ms 10ms
120 80 40 0 0.0001
17 5 2 10
100
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
PD Ton T 10 100
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD496A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 IAR(A) Peak Avalanche Current TA=25C Power Dissipation (W) 80 60 40 TA=125C 20 0 0.000001 TA=150C 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F)
TA=100C
0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability (Note C)
40 35 Current rating ID(A) 30
10000
TA=25C
1000
Power (W)
25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F) 10
100
17 5 2 10
10
1 0 0 0 0.01 0.1 1 10
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
100 0 1000
ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1 PD Single Pulse Ton 1 10
0.01
0.001 0.00001
T 100 1000
0.0001
0.001
0.01
0.1
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD496A
Gate Charge Test Circuit & W aveform
Vgs
Qg
+
VDC
10V
VDC
DUT
+ Vds -
Qgs
Qgd
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Rg Vgs
Vgs
DUT
VDC
+ Vdd -
90%
10% Vgs
t d(on) t on tr t d(off) t off tf
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
Vds
Id
Vgs
E AR= 1/2 LIAR
Vds
Vgs
2
BVDSS
VDC
+ Vdd -
Rg
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
DUT
Q rr = - Idt
Vgs
t rr
Vds -
Isd
Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt
I RM
Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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