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| SMD Type PNP Silicon Epitaxial Transistor 2SB798 Transistors Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE(sat)<-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current(Pulse) * Total power dissipation Junction temperature Storage temperature range * PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -30 -25 -5 -1 1.5 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 is, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -30 V, IE = 0 VEB = -5.0 V, IC = 0 VCE = -1.0 V, IC = -100 mA VCE = -1.0 V, IC = -1.0A VCE(sat) IC = -1A, IB = -0.1A VBE(sat) IC = -1A, IB = -0.1A VBE fT Cob VCE = -6.0 V, IC = -10 mA VCE = -6.0 V, IE = 10 mA VCB = -6.0 V, IE = 0 , f = 1.0 MHz -600 90 50 200 100 -0.25 -1.0 -640 110 36 -0.4 -1.2 -700 V V mV MHz pF Min Typ Max -100 -100 400 Unit nA nA hFE Classification Marking hFE DM 90 180 DL 135 270 DK 200 400 www.kexin.com.cn 1 |
Price & Availability of 2SB798
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