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| SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1252 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 High VEBO. Wide ASO and high durability against breakdown. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -15 -150 -300 200 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -40V , IE = 0 VEB = -10V , IC = 0 VCE = -6V , IC = -1mA VCE = -6V , IC = -1mA VCB = -6V , f = 1MHz 90 100 3.5 -0.5 -60 -50 -15 Min Typ Max -0.1 -0.1 560 MHz pF V V V V Unit iA iA VCE(sat) IC = -50mA , IB = -5mA V(BR)CBO IC = -10iA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10iA , IC = 0 hFE Classification Marking hFE 90 D4 180 D5 135 270 D6 200 400 D7 300 600 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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