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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3850 DESCRIPTION With TO-3PN package Good linearity of hFE Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 500 400 7 20 30 6 UNIT V V V A A A Open collector Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2.5 W 125 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.5A ;L=25mH IC=10A ;IB=2A IC=10A ;IB=2A VCB=500V ;IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V IC=10A ; VCE=5V IC=1A ; VCE=10V 15 10 15 MIN 400 2SC3850 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 100 100 |I |I V V A A Switching times ton ts tf Fall time Turn-on time Storage time INC E SEM ANG H IC=10A IB1=-IB2=2A VCC=125V OND IC TOR UC 1.0 2.5 1.0 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3850 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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