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164245 LC503 254976 SD820 1N5187 10050 02727 CY2077SC
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  Datasheet File OCR Text:
 SMD Type
Silicon NPN Epitaxial 2SC2734
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
UHF frequency converter
+0.1 1.3-0.1
Features
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 20 11 3 50 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current gain Collector output capacitance Conversion gain Symbol VCBO VCEO VEBO ICBO Testconditons IC = 10iA , IE = 0 IC = 1mA , RBE = IE = 10iA , IC = 0 VCB = 10V, IC = 0 Min 20 11 3 0.5 0.7 20 90 0.9 15 200 1.5 pF dB Typ Max Unit V V V A V
VCE(sat) IC = 10 mA, IB = 5 mA hFE Cob CG VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 6 V, IC = 2 mA,f = 900 MHz, fosc = 930 MHz (0dBm) ,f = 30 MHz VCC = 6 V, IC = 2 mA, f = 900 MHz, fosc = 930 MHz (0dBm) , fout = 30 MHz VCC = 6 V, IC = 5 mA, f = 930 MHz VCE = 10 V, IC = 10 mA 1.4
Noise figure Oscillating output voltage Transition frequency
NF VOSC fT
9 140 3.5
+0.1 0.38-0.1
0-0.1
dB mV GHz
Marking
Marking GC
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1
SMD Type
2SC2734
Typlcal Characteristics
Transistors Diodes
Fig.1 Maximum Collector Dissipation Curve
Fig.2 DC Current Transfer Ratio vs. Collector Current
Fig.3 Gain Bandwidth Product vs. Collector Current
Fig.4 Collector Output Capacitance vs. Collector to Base Voltage
2
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SMD Type
2SC2734
Transistors Diodes
Fig.5 Reverse Transfer Capacitance vs. Collector to Base Voltage
Fig.6 Conversion Gain vs. Collector Current
Fig.7 Noise Figure vs. Collector Current
Fig.8 Oscillating Output Voltage vs. Collector Current
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3
SMD Type
2SC2734
Transistors Diodes
Fig.9 Oscillating Output Voltage vs. Supply Voltage
Fig.10 2nd I.M. Distortion vs. Collector Current
Fig.11 3rd I.M. Distortion vs. Collector Current
Fig.12 Power Gain vs. Frequency
4
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Price & Availability of 2SC2734
Quest Components

Part # Manufacturer Description Price BuyNow  Qty.
2SC2734GC18TR-E
Renesas Electronics Corporation 223: USD0.15
26: USD0.225
1: USD0.5
BuyNow
1100

ComSIT USA

Part # Manufacturer Description Price BuyNow  Qty.
2SC2734GTR
Hitachi Ltd SILICON NPN EPITAXIAL TRANSISTOR RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RFQ
3000

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