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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB761 2SB761A DESCRIPTION With TO-220C package Complement to type 2SD856/856A Low collector saturation voltage APPLICATIONS For audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Tc=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO IN Collector-emitter voltage ANG CH 2SB761 2SB761A 2SB761 EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -60 -80 -60 UNIT V V -80 -5 -3 -5 V A A W ae ae 2SB761A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collectorl power dissipation Junction temperature Storage temperature TC=25ae 35 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB761 IC=-30mA; IB=0 2SB761A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2SB761 2SB761A ICEO IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current IC=-3 A;IB=-0.375 A IC=-3A ; VCE=-4V VCE=-60V; VBE=0 CONDITIONS 2SB761 2SB761A SYMBOL MIN -60 TYP. MAX UNIT VCEO Collector-emitter breakdown voltage V -80 -1.2 -1.8 V V ICES Collector cut-off current -200 VCE=-80V; VBE=0 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 40 10 -300 -1 |I A |I A mA DC current gain DC current gain Switching times ton toff Turn-on time Turn-off time HAN INC Q 70-150 P SEM GE OND IC TOR UC 250 0.5 2.0 |I |I s s IC=-1A ; IB1=-IB2=-0.1 A hFE-1 classifications R 40-90 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB761 2SB761A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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