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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ423
DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 325V(Min.) *DC Current Gain: hFE= 30-90@ IC= 1A
APPLICATIONS *Designed for medium to high voltage inverters, converters, regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEX VEBO IC IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature Range
VALUE 400 400 5 10 2 125 150 -65~200
UNIT V V V A A W
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W
Rth j-c
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP
MJ423
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0
325
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
B
0.8
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
B
1.25 0.25 0.5 5.0
V
ICEX
Collector Cutoff Current
VCE= 400V;VEB(off)=1.5V VCE= 400V;VEB(off)=1.5V;TC=125 VEB= 5V; IC= 0
mA
IEBO
Emitter Cutoff current
mA
hFE-1
DC Current Gain
IC= 1A; VCE=5V
30
90
hFE-2
DC Current Gain
IC= 2.5A; VCE=5V
10
fT
Current-Gain--Bandwidth Product
IC= 0.2A; VCE=10V; f=1.0MHz
2.5
MHz
isc Websitewww.iscsemi.cn


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