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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUY49P DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min) *High Current Capability APPLICATIONS *Designed for high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature 5.0 A PC 15 W TJ 150 Tstg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 8.33 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUY49P TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA; IB= 0 200 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.1 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 0.1 A hFE-1 DC Current Cain IC= 20mA; VCE= 2V 30 hFE-2 DC Current Cain IC= 20mA; VCE= 5V 40 hFE-3 DC Current Cain IC= 0.5mA; VCE= 5V 40 fT Current-Gain--Bandwidth Product IC= 100mA; VCE= 10V 30 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 50 pF Switching Times ton Turn-On Time IC= 0.5A; IB1= -IB2= 50mA; VCC= 20V 0.8 s toff Turn-Off Time 2.5 s isc Websitewww.iscsemi.cn 2 |
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