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| 2SJ294 Silicon P Channel MOS FET Application TO-220FM High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter * Avalanche Ratings 2 1 1 23 3 1. Gate 2. Drain 3. Source Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings -60 20 -20 -80 -20 -20 34 35 150 -55 to +150 Unit V V A A A A mJ W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C *** Value at Tch = 25 C, Rg 50 2SJ294 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -60 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.05 10 -250 -2.25 0.065 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -10 A VGS = -10 V * ID = -10 A VGS = -4 V * ID = -10 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -10 A VGS = -10 V RL = 3 ------------------------------------------------ -- 0.07 0.095 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 10 16 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See characteristic curves of 2SJ291 -- -- -- -- -- -- -- -- 2200 1000 300 25 130 320 210 -1.1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -20 A, VGS = 0 IF = -20 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 160 -- ns -------------------------------------------------------------------------------------- 2SJ294 Power vs. Temperature Derating 40 Pch (W) -200 -100 I D (A) -50 -20 -10 -5 -2 -1 -0.5 Maximum Safe Operation Area 10 10 PW DC Op 30 Channel Dissipation Drain Current =1 1m 0m s( 0 s s s ho 20 10 tio Operation in n( this area is Tc =2 limited by R DS(on) era 1s t) 5 C) 0 50 100 150 Tc (C) 200 Case Temperature Ta = 25 C -0.2 -1 -2 -5 -10 -20 -50 -100 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 3.57 C/W, Tc = 25 C PDM D= PW T 0.03 0.02 1 0.0 1s h PW T p ot uls e 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 |
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