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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD844 DESCRIPTION With TO-3P(I) package Complement to type 2SB754 High collector current :IC=7A Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IE PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 50 Collector-base voltage Open emitter Collector-emitter voltage Open base 50 5 7 -7 Ta=25ae 2.5 Emitter-base voltage Collector current Emitter current Open collector Fig.1 simplified outline (TO-3P(I)) and symbol UNIT V V V A A PC Collector power dissipation TC=25ae 60 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA ;IB=0 IE=10mA; IC=0 IC=4.0A; IB=0.4A IC=4A ; VCE=1V VCB=50V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=4A ; VCE=1V 70 30 MIN 50 5 TYP. 2SD844 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V V 0.4 1.2 10 10 240 |I |I V V A A hFE-1 Classifications O Y TOR NDU ICO E SEM ANG INCH Transition frequency IC=1A ; VCE=5V 15 Collector output capacitance f=1MHz ; VCB=10V 250 MHz pF 70-140 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD844 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance: A 0.10 mm) 3 |
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