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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3465 DESCRIPTION With TO-3 package High voltage Fast switching speed APPLICATIONS For switching regulator applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 1100 800 7 12 160 200 -65~200 UNIT V V V A W ae ae Emitter-base voltage Open collector Total power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=5mA; RBE= IC=1mA; IE=0; IE=1mA; IC=0; IC=6A;IB=1.2A IC=6A;IB=1.2A VCB=800V;IE=0 VEB=7V;IC=0 IC=0.8A ;VCE=5V IC=4A ;VCE=5V 10 MIN 800 1100 7 TYP. 2SC3465 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V V V 2.0 1.5 10 10 |I |I V V A A DC current gain CHA IN L 15-30 M Transition freuquency Collector output capacitance E SEM NG IC=0.8A ;VCE=10V OND IC 10 TOR UC 40 15 240 MHz pF IE=0 ;VCB=10V,f=1MHz hFE-1 classifications K 10-20 20-40 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3465 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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