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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION With TO-3 package Complement to type 2SD733/733K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER SEM GE 2SB697 2SB697K 2SB697 2SB697K VCBO VCEO HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter OND IC CONDITIONS TOR UC VALUE -160 -180 -140 UNIT V Open base -160 Open collector -6 -12 -20 TC=25ae 100 150 -40~150 ae ae V VEBO IC ICM PC Tj Tstg V A A W Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS 2SB697 2SB697K SYMBOL MIN TYP. MAX UNIT 2SB697 V(BR)CEO Collector-emitter breakdown voltage 2SB697K IC=-50mA ;IB=0 -140 V -160 2SB697 V(BR)CBO Collector-emitter breakdown voltage 2SB697K IC=-5mA ;IE=0 -160 V -180 V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A -1.0 -2.5 V VBE Base-emitter on voltage ICBO Collector cut-off current IC=-1A ; VCE=-5V -1.5 V VCB=-80V; IE=0 IEBO Emitter cut-off current hFE-1 DC current gain hFE-2 DC current gain HAN INC SEM GE VEB=-4V; IC=0 OND IC TOR UC -0.1 -0.1 320 mA mA IC=-1A ; VCE=-5V 40 IC=-5A ; VCE=-5V 20 fT Transition frequency IC=-1A ; VCE=-5V 15 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB697 2SB697K SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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