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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K DESCRIPTION With TO-3 package Complement to type 2SB697/697K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER VCBO TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 160 2SD733 Collector-base voltage Open emitter 2SD733K 2SD733 180 140 Collector-emitter voltage 2SD733K Open base 160 Open collector 6 12 20 TC=25ae 100 150 -40~150 Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature Collector Fig.1 simplified outline (TO-3) and symbol UNIT V VCEO V VEBO IC ICM PC Tj Tstg V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS 2SD733 2SD733K SYMBOL MIN TYP. MAX UNIT 2SD733 V(BR)CEO Collector-emitter breakdown voltage 2SD733K IC=50mA ;IB=0 140 V 160 2SD733 V(BR)CBO Collector-emitter breakdown voltage 2SD733K IC=5mA ;IE=0 160 V 180 V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A 0.7 2.5 V VBE ICBO IEBO hFE-1 hFE-2 TOR NDU ICO E SEM ANG INCH Base-emitter on voltage IC=1A ; VCE=5V Collector cut-off current VCB=80V; IE=0 Emitter cut-off current VEB=4V; IC=0 DC current gain IC=1A ; VCE=-5V 40 DC current gain IC=5A ; VCE=5V 20 Transition frequency IC=1A ; VCE=5V 15 1.5 V 0.1 mA 0.1 mA 320 fT MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD733 2SD733K TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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