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STN3PF06
P-channel 60 V - 0.20 - 2.5 A - SOT-223 STripFETTM II Power MOSFET
Features
Type STN3PF06

VDSS 60 V
RDS(on) max < 0.22
ID 2.5 A
2
Extremely dv/dt capability 100% avalanche tested Application oriented characterization
1
SOT-223
2
3
Application
Switching applications
Description
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking N3PF06 Package SOT-223 Packaging Tape and reel
Order code STN3PF06
March 2008
Rev 4
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www.st.com 12
Contents
STN3PF06
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuits
............................................... 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STN3PF06
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 60 20 2.5 1.5 10 2.5 0.02 6 -65 to 150 Unit V V A A A W W/C V/ns C
PTOT dv/dt (2) Tj Tstg
Peak diode recovery voltage slope Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area 2. ISD 3A, di/dt 200 A/s, VDD = 80% V(BR)DSS
Table 3.
Symbol Rthj-pcb Rthj-a Tl
Thermal data
Parameter Thermal resistance junction-pcb board max Thermal resistance junction-ambient max(1) Value 50 62.5 260 Unit C/W C/W C
Maximum lead temperature for soldering purpose
1. Surface mounted
Note:
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
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Electrical characteristics
STN3PF06
2
Electrical characteristics
(TCASE=25 C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS ID(on) IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) On state drain current Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS = Max rating, TC=125 C VDS > ID(on) x RDS(on)max, VGS =10 V VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 1.5 A 2 0.20 2.5 100 4 0.22 Min. 60 1 10 Typ. Max. Unit V A A A nA V
Table 5.
Symbol gfs Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID= 1.25 A VDS = 25 V, f = 1 MHz, VGS = 0 ID = 12 A, VDD = 48 V, VGS = 10 V (see Figure 14) Min. Typ. 1.5 850 230 75 16 4 6 21 Max. Unit S pF pF pF nC nC nC
Note:
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
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STN3PF06
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Off-voltage rise time Fall time Cross-over time Test conditions VDD= 30 V, ID=6 A, RG=4.7 , VGS=10 V (see Figure 13) VDD= 30 V, ID=6 A, RG=4.7 , VGS=10 V (see Figure 13) Vclamp= 48 V, ID=12 A, RG=4.7 , VGS=10 V (see Figure 13) Min. Typ. 20 40 40 10 10 17 30 Max. Unit ns ns ns ns ns ns ns
Table 7.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 1.5 A, VGS = 0 ISD = 12 A, di/dt = 100 A/s VDD = 30 V, Tj =150 C 100 260 5.2 Test conditions Min Typ. Max 2.5 10 1.2 Unit A A V ns C A
1. Pulse width limited by Tjmax 2. Pulsed: pulse duration = 300 s, duty cycle 1.5%
Note:
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
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Electrical characteristics
STN3PF06
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area Figure 3. Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
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STN3PF06 Figure 8. Gate charge vs gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
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Test circuits
STN3PF06
3
Test circuits
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load switching and diode recovery times
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STN3PF06
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STN3PF06
SOT-223 MECHANICAL DATA
mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264
DIM.
P008B
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STN3PF06
Revision history
5
Revision history
Table 8.
Date 08-May-2007 27-Mar-2008
Document revision history
Revision 3 4 Changes The document has been reformatted Document status promoted from preliminary data to datasheet.
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STN3PF06
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