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| HAT2169N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 May.29.2005 Features * * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V) Outline LFPAK-i 5678 DDDD 1(S) 2(S) 3(S) 4(G) 4 G 8(D) 7(D) 6(D) 5(D) 2X XX 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse) IDR Note1 Ratings 40 20 50 200 50 30 72 30 4.17 150 - 55 to + 150 Unit V V A A A A mJ W IAP Note 2 EAR Pch ch-C Tch Tstg Note3 Note 2 C/W C C Rev.0.01, May.29.2005, page 1 of 3 HAT2169N Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 40 20 -- -- 1.0 -- -- 39 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 3.1 4.3 65 6650 890 360 0.5 45 21 10 15 64 55 9.5 0.83 40 Max -- -- 10 1 2.5 3.8 6.3 -- -- -- -- -- -- -- -- -- -- -- -- 1.08 -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 25 A, VGS = 10 V Note4 ID = 25 A, VGS = 4.5 V ID = 25 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz Note4 Note4 VDD = 10 V VGS = 4.5 V ID = 50 A VGS = 10 V, ID = 25 A VDD 10 V RL = 0.4 Rg = 4.7 IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 diF/ dt = 100 A/ s Note4 Rev.0.01, May.29.2005, page 2 of 3 HAT2169N Package Dimensions Unit: mm 1.27 0.15 0. 4 0.25 1.2MAX 1.2MAX 0. 5 0. 5 8 7 6 5 (Laser Mark ) 1 2 3 4 0. 2 0.1MAX 1.1MAX 5.3MAX 1.27 0.15 0. 4 6.2MAX 3.95 2XX X Package Code JEDEC JEITA Mass (reference value) LFPAK-i -- -- 0.080 g Rev.0.01, May.29.2005, page 3 of 3 |
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