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AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
Features FET1 FET2 VDS (V) = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5m <24m (VGS = 10V) <29m (VGS = 4.5V) RDS(ON) < 16m UIS TESTED! Rg,Ciss,Coss,Crss Tested
General Description
The AO4926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4926 is Pb-free (meets ROHS & Sony 259 specifications).
SOIC-8 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Max FET1 Max FET2 VDS Drain-Source Voltage 30 30 VGS Gate-Source Voltage 12 12 Continuous Drain 9.5 7.3 TA=25C AF Current TA=70C 7.8 5.9 IDSM Pulsed Drain Current Avalanche Current B Repetitive avalanche energy L=0.3mH B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics FET1 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Thermal Characteristics FET2 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead
B
Units V V A A A mJ W C
IDM IAR EAR PDSM TJ, TSTG
40 22 73 2.0 1.3
40 12 22 2.0 1.3
-55 to 150 -55 to 150
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 48 74 32
Max 62.5 90 40
Units C/W C/W C/W
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 48 74 32
Max 62.5 90 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
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AO4926
FET1 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=7A Forward Transconductance VDS=5V, ID=9.5A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=250uA, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=9.5A TJ=125C 1.5 40 11 17.1 13 78 0.38 0.5 4 1980 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 317 111 1.3 33.0 VGS=10V, VDS=15V, ID=9A 15.0 5.3 6.0 5.5 VGS=10V, VDS=15V, RL=1.6, RGEN=3 IF=9.5A, dI/dt=300A/s 5.5 27.0 4.3 11 7 13 2.0 43 20 nC nC nC ns ns ns ns ns nC 2574 13.5 21.3 16.0 1.8 Min 30 0.02 10 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=9.5A, dI/dt=300A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev1: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V 4.5V 60 ID (A) ID(A) 15 10 5 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VDS (Volts) VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=7A ID=9.5A VGS=10V 6V 30 25 20 VDS=5V
80
40 VGS=3.5V 20
125
25C
0
DYNAMIC PARAMETERS Figure 1: On-Region Characteristics
16
14 RDS(ON) (m )
VGS=4.5V
12
10
VGS=10V
8
30 ID=9.5A 125C RDS(ON) (m ) IS (A) 20
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 125C
25
15
10
25C
1.0E-04 1.0E-05
5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
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AO4926
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 Capacitance (pF) VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=9.5A 3000 2500 Ciss 2000 1500 1000 Crss 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss
DYNAMIC PARAMETERS
100.0 10s 100s 10.0 ID (Amps) RDS(ON) limited 10ms 1ms Power (W)
100 90 80 70 60 50 40 30 20 10 0.1 1 VDS (Volts) 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 TJ(Max)=150C TA=25C
1.0 10s DC 0.1 TJ(Max)=150C TA=25C 1s
0.0 0.01
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 1 0.9 1.0E-02 VDS=24V 1.0E-03 IR (A) VSD(V) VDS=12V 1.0E-04 0.8 0.7 0.6 0.5 0.4 0.3 1.0E-05 0.2 0.1 1.0E-06 100 150 200 Temperature (C) Figure 12: Diode PARAMETERS Reverse Leakage Current vs. Junction Temperature 8 di/dt=800A/us 20 15 10 5 0 0 5 10 15 20 25 30 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 125C 20 15 10 5 0 0 125 25C Qrr Irm 200 400 600 800 Is=20A 25C Qrr (nC) 10 9 8 7 Irm (A) 5 4 3 2 1 0 1000 3 0 0 200 400 600 800 125C S 0.5 0 1000 trr (ns) 6 15 12 9 6 25C 25C Irm (A) trr (ns) 125C Irm 25C 2 4 125C 6 Qrr 12 9 trr 6 25C 3 0 0 5 10 15 20 25 30 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current S 125C 0 0 0.5 25C 1 di/dt=800A/us 125C 2 1.5 15 0 50 0 0 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 2.5 50 IS=1A 10A 5A 20A
DYNAMIC
25
Qrr (nC)
18 125C 25C Is=20A
3 2.5 2 trr 1.5 1 S
di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
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S
AO4926
FET2 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=7.3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=6A VGS=2.5V, ID=5A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=7.3A IS=1A,VGS=0V 0.7 40 20 28 23.5 34.7 26 0.71 1 2.8 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 65 0.95 10 VGS=4.5V, VDS=15V, ID=7.3A 1.8 3.75 3.2 VGS=10V, VDS=15V, RL=2, RGEN=6 IF=7.3A, dI/dt=100A/s 3.5 21.5 2.7 16.8 8 21 1.5 12 1100 24 35 29 48 1 Min 30 0.002 1 5 100 1.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 1: June 2007
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 40 ID (A) 30 2.5V 20 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 30 Normalized On-Resistance 1.8 ID=6A VGS=4.5V VGS=2V 4 10V 4.5V 3V ID(A) 16 VDS=5V 20
12 125C 8 25C
0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics
VGS=4.5V RDS(ON) (m ) 25
1.5
1.2
20 VGS=10V
VGS=10V ID=7.3A
0.9
15 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
60 55 50 45 RDS(ON) (m ) 125C IS (A) 40 35 ID=7.3A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 125C
1.0E-03 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25C 25 1.0E-04 20 1.0E-05 25C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 15 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4926
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 VDS=15V ID=7.3A Capacitance (pF) 1400 1200 1000 800 600 400 Crss Coss Ciss
100.00 10s 10.00 ID (Amps) 100s Power (W) RDS(ON) limited 10s DC 0.10 TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) 10 100 1ms 1s
50 40 30 20 10 0
0.0001 0.001 0.01 0.1 1 10 100 1000
TJ(Max)=150C TA=25C
1.00
0.01 0.01
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PD APPLICATIONS OR USES AS CRITICAL D=T /T
on
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS=T +P .Z AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.01 TJ,PK ARE NOT JA.RJA A DM T IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TOon RJA=62.5C/W T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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