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| SK30GB123 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP(R) 2 Inverse Diode IGBT Module SK30GB123 SK30GAL123 SK30GAR123 Preliminary Data Module Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB GAL GAR 1 08-03-2007 SCT (c) by SEMIKRON SK30GB123 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP(R) 2 IGBT Module SK30GB123 SK30GAL123 SK30GAR123 Preliminary Data This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Features Typical Applications GB GAL GAR 2 08-03-2007 SCT (c) by SEMIKRON SK30GB123 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 08-03-2007 SCT (c) by SEMIKRON SK30GB123 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 08-03-2007 SCT (c) by SEMIKRON SK30GB123 UL recognized file no. E 63 532 5 08-03-2007 SCT (c) by SEMIKRON |
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