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DB3 ... DB4 DB3 ... DB4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Breakover voltage Durchbruchspannung O 1.9 28 ... 45 V 2A DO-35 SOD-27 0.13 g Peak pulse current Max. Triggerimpuls Glass case Glas-Gehause Weight approx. Gewicht ca. 62.5 3.9 Type O 0.52 Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Dimensions - Mae [mm] Maximum ratings Power dissipation Verlustleistung Peak pulse current (120 Hz pulse repetition rate) Max. Triggerstrom (120 Hz Puls-Wiederholrate) Operating Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur TA = 50C tp 10 s Ptot IPM Tj TS Grenzwerte 150 mW 1) 2 A 1) -50...+100C -50...+175C Characteristics Breakover voltage Durchbruchspannung Breakover current - Durchbruchstrom Asymmetry of breakover voltage Unsymmetrie der Durchbruchspannung Foldback voltage - Spannungs-Rucksprung I = IBO to/auf IF = 10 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft dV/dt = 10 V/s DB3 DB4 V = 98% VBO |V(BO)F - V(BO)R| dV/dt = 10 V/s VBO VBO IBO VBO VF/R RthA Kennwerte 28 ... 36 V 35 ... 45 V < 200 A < 3.8 V >5V < 300 K/W 1) 1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gultig, wenn die Anschlussdrahte in 10 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 1 DB3 ... DB4 2 http://www.diotec.com/ (c) Diotec Semiconductor AG |
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