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MIG600J2CMB1W
MITSUBISHI SEMICONDUCTOR
MIG600J2CMB1W (600V/600A 2in1)
High Power Switching Applications Motor Control Applications
* * * * * * Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from the case. Low thermal resistance VCE (sat) = 2.1 V (typ.) UL recognized: File No.E87989 Weight: 380 g (typ.)
Equivalent Circuit
1 2 3 4 5 6 7 8
FO GND IN VD
FO GND IN VD
GND VS
OUT
GND VS
OUT
E2 C2/E1 1. 5. FO (L) FO (H) 2. 6. GND (L) GND (H) 3. 7. IN (L) IN (H)
C1
4. 8.
VD (L) VD (H)
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MIG600J2CMB1W
Package Dimensions
Unit: mm
1. 5.
FO (L) FO (H)
2. 6.
GND (L) GND (H)
3. 7.
IN (L) IN (H)
4. 8.
VD (L) VD (H)
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MIG600J2CMB1W
Signal Terminal Layout
Unit: mm
1. 5.
FO (L) FO (H)
2. 6.
GND (L) GND (H)
3. 7.
IN (L) IN (H)
4. 8.
VD (L) VD (H)
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Maximum Ratings (Tj = 25C)
Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Storage temperature Module Isolation voltage Screw torque (terminal) Screw torque (mounting) AC 1 min M6 M5 Tc = 25C, DC Tc = 25C, DC Tc = 25C VD-GND terminal IN-GND terminal FO-GND terminal FO sink current Characteristics Condition P-N power terminal Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Rating 450 600 600 600 2770 150 20 20 20 10 -20~+100 -40~+125 2500 3 3 Unit V V A A W C V V V mA C C V Nm Nm

Tc Tstg VISO
Electrical Characteristics
1. Inverter stage
Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 600 V VD = 15 V IC = 600 A VIN = 15 V 0 V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1.8 VCC = 300 V, IC = 600 A VD = 15 V, VIN = 15 V 0 V Tj = 25C, Inductive load (Note 1) Typ. 2.1 2.3 2.2 2.2 0.4 0.2 2.1 0.35 Max 1 10 2.5 2.6 3.0 3.0 s V V Unit mA
Collector-emitter saturation voltage Forward voltage
VCE (sat) VF ton tc (on)
IF = 600 A, Tj = 25C
Switching time
trr toff tc (off)
Note 1: Switching time test circuit & timing chart
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2. Control stage (Tj = 25C)
Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Overcurrent protection trip Inverter level Short-circuit protection trip level Overcurrent cut-off time Overtemperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level Inverter High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT OTr UV UVr tFO VD = 15 V VD = 15 V Test Condition Min 1.4 2.2 960 960 110 11.0 12.0 1 Typ. 13 13 1.6 2.5 10 5 118 108 12.0 12.5 2 Max 17 17 1.8 2.8 12 mA 0.1 125 12.5 13.0 3 ms A A s C V Unit mA
VD = 15 V
VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Case temperature
V
3. Thermal resistance (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) IGBT FRD Compound is applied Test Condition Min Typ. 0.013 Max 0.045 0.068 C/W Unit C/W
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Switching Time Test Circuit
Intelligent power module TLP559 (IGM) VD 0.1 F 15 k OUT IN 15 V 68 F GND VS C1
GND C2/E1 VCC
VD IF = 16 mA PG 15 V 68 F GND 0.1 F 15 k OUT IN VS E2
GND
Timing Chart
Input pulse 15 V VIN Waveform 0
2.5 V
1.6 V
90% Irr IC Waveform Irr 90% trr 20% Irr
VCE Waveform
10% toff
10% tc (off)
10% ton
10% tc (on)
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4. Recommended conditions for application
Characteristics Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N power terminal VD-GND signal terminal PWM control Switching time test circuit (Note 2) Min 13.5 5 Typ. 300 15 Max 400 16.5 20 Unit V V kHz s
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above.
Dead Time Timing Chart
15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead
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IC - VCE
1200 VD = 17 V 1200
IC - VCE
1000
1000
(A)
(A)
VD = 17 V VD = 13 V
IC
Collector current
Collector current
VD = 15 V 600
IC
800
VD = 13 V
800
600
VD = 15 V
400
400
200 Common emitter Tj = 25C 0 0 1 2 3 4
200 Common emitter Tj = 125C 0 0 1 2 3 4
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
Switching time - IC
10 10
Switching time - IC
ton
ton
(s)
1 tc (on) tc (off) 0.1 Tj = 25C VCC = 300 V VD = 15 V L-LOAD 100 200 300 400 500 600 700
(s)
toff
toff 1 tc (on) tc (off) 0.1 Tj = 125C VCC = 300 V VD = 15 V L-LOAD 0 100 200 300 400 500 600 700
Switching time
0.01 0
Switching time
0.01
Collector current IC
(A)
Collector current IC
(A)
IF - VF
1200 1000
trr, Irr - IF
Peak reverse recovery current Irr (A) Reverse recovery time trr (x 10 ns)
1000
Irr
(A)
800
Forward current IF
100
600
trr 10 Common cathode : Tj = 25C : Tj = 125C 1 0 100 200 300 400 500 600 700
400 Common cathode : Tj = 25C : Tj = 125C 0 0 1 2 3 4
200
Forward voltage
VF (V)
Forward current
IF (A)
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OC - Tc
1600 100
ID - fc
(A)
1400
(mA) ID Control circuit current
OC
80
Over current protection trip level
1200 1000 800 600 400 200 VD = 15 V 0 0 25 50 75 100 125 150
60
40
20 VD = 15 V Tj = 25C 0 0 5 10 15 20 25
Case temperature
Tc
(C)
Carrier frequency
fc (kHz)
Reverse bias SOA
OC
Rth (t) - tw
Rth (t) (C/W)
1
1120 960
0.3 0.1 0.03 0.01 Diode stage
(A) IC
800
Collector current
640 480 320
Transient thermal resistance
Transistor stage
0.003 0.001 Tc = 25C 0.0003 0.001 0.01
160 0 0
Tj < 125C = VD = 15 V 200 400 600 800
0.1
1
10
Collector-emitter voltage
VCE
(V)
Pulse width
tw (s)
Turn on loss - IC
100 100
Turn off loss - IC
Eon (mJ)
10
(mJ) Turn off loss Eoff
VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C
10
Turn on loss
1
1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 0.1 0 100 200 300 400 500 600 700
0.1 0
100
200
300
400
500
600
700
Collector current IC (A)
Collector current IC (A)
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