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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - FEBRUARY 95 FEATURES * 60 Volt VDS * RDS(on)= 0.33 * Repetitive Avalanche Rating APPLICATIONS * Solenoids / relay drivers for automotive * Stepper Motor Drivers * DC-DC convertors ZVN4306AV D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25C Practical Continuous Drain Current at T amb =25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb =25C Practical Power Dissipation at T amb =25C* Avalanche Current-Repetitive Avalanche Energy-Repetitive Operating and Storage Temperature Range SYMBOL V DS ID I DP I DM V GS P tot P totp I AR E AR T j :T stg VALUE 60 1.1 1.3 15 20 850 1.13 1 25 -55 to +150 UNIT V A A A V mW W A mJ C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ZVN4306AV ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) SYMBOL MIN. BV DSS 60 TYP. MAX. UNIT CONDITIONS. V I D =1mA, V GS =0V V GS(th) 1.3 3 V I D =1mA, V DS = V GS I GSS I DSS 100 10 100 12 nA A A A V GS = 20V, V DS =0V V DS =60V, V GS =0 V DS =48V, V GS =0V, T=125C(2) V DS =10V, V GS =10V I D(on) R DS(on) 0.22 0.32 0.33 0.45 V GS =10V,I D =3A V GS =5V, I D =1.5A g fs 700 mS V DS =25V,I D =3A C iss 350 140 pF pF V DS =25 V, V GS =0V, f=1MHz Common Source C oss Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) C rss 30 pF t d(on) 8 ns V DD 25V, V GEN =10V, I D =3A tr t d(off) 25 30 ns ns tf 16 ns (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ZVN4306AV TYPICAL CHARACTERISTICS 12 11 7V RDS(on)-Drain Source On Resistance () VGS= 20V 12V 10V 9V 8V VGS=3V 10 3.5V 5V 6V ID - Drain Current (Amps) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 6V 1.0 5V 8V 10V 4V 3.5V 3V 10 0.1 0.1 1 10 100 VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps) Saturation Characteristics On-resistance v drain current 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ain Dr Re ce ur So R ce an ist s n) (o DS gfs-Transconductance (S) VGS=10V ID=3A 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VDS=10V VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) -50 -25 0 25 50 75 100 125 150 175 200 225 Tj-Junction Temperature (C) ID(on)- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current VGS-Gate Source Voltage (Volts) 500 400 300 200 100 0 0 10 20 30 40 50 Ciss 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 ID=3A VDD= 20V 40V 60V C-Capacitance (pF) Coss Crss 60 70 80 9 10 11 12 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage ZVN4306AV THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W 1.0 Thermal Resistance (C/W) 150 t D.C. D=t/t2 0.75 100 Am em tt en bi t2 D=0.6 0.50 re tu ra pe 50 D=0.2 D=0.1 D=0.05 0.25 0 -40 -20 0 20 40 60 80 100 120 140 160 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 25 20 15 10 5 0 0 25 50 Note: Unclamped Inductive Test L=43mH, Vcc=12V 1.0 0.8 0.6 0.4 0.2 Note: Unclamped Inductive Test L=43mH, Vcc=12V 75 100 125 150 0 0 25 50 75 100 125 150 TJ - Junction Temperature (C) TJ - Junction Temperature (C) Maximum Repetitive Avalanche Energy v Junction Temperature. Maximum Repetitive Avalanche Current v Junction Temperature Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c)Zetex plc 1997 Internet: http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. |
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