 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 1.5 * Spice model available ZVN4210A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 100 450 6 20 700 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 250 100 40 12 4 8 20 30 2.5 1.5 1.8 100 0.8 2.4 100 10 100 MAX. UNIT CONDITIONS. V V nA A A A mS pF pF pF ns ns ns ns V DD 25V, I D=1.5A V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V,I D=1.5A V GS=5V,I D=500mA V DS=25V,I D=1.5A Forward Transconductance(1)(2 g fs ) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) C iss C oss C rss t d(on) tr t d(off) tf 3-388 ZVN4210A TYPICAL CHARACTERISTICS RDS(on)-Drain Source On Resistance () 100 VGS=3V 3.5V 5V 6V 8V 10V VGS= 10V 9V 8V 7V 6V 5V 4V 3.5V 3V 2.5V 2V 10 5 ID - Drain Current (Amps) 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 1 0.1 1.0 10 VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps) Saturation Characteristics On-resistance v drain current 2.6 1000 900 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 gfs-Transconductance (mS) e rc ou -S n ai VGS=VDS Dr Gate ID=1mA Thres hold V oltage V GS(TH ) s Re is e nc ta RD ) on S( VGS=10V ID=1.5A 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 VDS=10V 25 50 75 100 125 150 175 200 225 Tj-Junction Temperature (C) ID(on)- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current 16 VGS-Gate Source Voltage (Volts) 200 VDD= 20V 50V 80V ID=1.5A 14 12 10 8 6 4 2 0 0 C-Capacitance (pF) 160 120 80 Ciss 40 0 Coss Crss 100 0 20 40 60 80 1 2 3 4 5 6 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-389 |
Price & Availability of ZVN4210A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |