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| Composite Transistors XN431L Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 2.9 -0.05 s Features q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 -50 -50 -100 300 150 -55 to +150 Unit V V mA V V mA mW C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: FI Internal Connection 6 5 4 Tr1 1 2 3 C Tr2 0 to 0.05 UN121L+UN111L 0.1 to 0.3 0.8 0.16-0.06 +0.2 +0.1 1.450.1 +0.1 +0.1 1 Composite Transistors XN431L (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE = -2mA, f = 200MHz Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k -30% 0.8 4.7 1.0 150 4.9 0.2 +30% 1.2 MHz 20 0.25 V V V k min 50 50 0.1 0.5 2.0 typ max Unit V V A A mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = -10V, IE = 2mA, f = 200MHz Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k -30% 0.8 4.7 1.0 150 -4.9 - 0.2 +30% 1.2 MHz 20 - 0.25 V V V k min -50 -50 - 0.1 - 0.5 -2.0 typ max Unit V V A A mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN431L Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 240 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 240 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA 160 Ta=75C 1 120 25C Ta=75C 25C 0.1 -25C -25C 80 40 0.2mA 0 0 2 4 6 8 10 12 40 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 100 f=1MHz IE=0 Ta=25C IO -- VIN VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 10 3 1 2 0.1 1 0 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -240 XN431L VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -200 Forward current transfer ratio hFE -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -1 Ta=75C 25C -25C 200 Collector current IC (mA) -160 IB=-1.0mA -0.8mA -80 -0.6mA -0.4mA -0.2mA 0 0 -2 -4 -6 -8 -10 -12 160 -120 120 Ta=75C 25C -25C 80 -40 40 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C -100 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) -10 3 -1 2 -0.1 1 0 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Output current IO (mA) 4 |
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