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| VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Large area planar silicon photodiode in a "flat" window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good blue response. CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) VTB6061J SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 55 5.7 x 10-14 (Typ.) 1.1 x 10 13 (Typ.) .10 -8.0 8.0 0.1 1100 260 Typ. 350 .12 490 -2.0 2.0 .23 Max. A %/C mV mV/C nA G %/C nF A/W nm nm V Degrees W Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 37 |
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