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| TN6705A Discrete POWER & Signal Technologies TN6705A C TO-226 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See TN6715A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 45 60 5.0 1.5 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max TN6705A 1.0 8.0 125 50 Units W mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation TN6705A NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 10 mA, I B = 0 I C = 100 mA, I E = 0 I E = 1.0 mA, I C = 0 VCB = 60 V, IE = 0 VEB = 5.0 V, I C = 0 45 60 5.0 0.1 0.1 V V V A A ON CHARACTERISTICS* hFE DC Current Gain VCE = 2.0 V, IC = 50 mA VCE = 2.0 V, IC = 250 mA VCE = 2.0 V, IC = 500 mA I C = 500 mA, IB = 50 mA I C = 1.0 A, IB = 100 mA VCE = 2.0 V, IC = 1.0 A 40 40 25 250 0.5 1.0 1.5 V V V VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Ccb hfe Collector-Base Capacitance Small-Signal Current Gain VCB = 10 V, f = 1.0 MHz I C = 50 mA, VCE = 5.0 V, f = 20 MHz 2.5 30 20 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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