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| SI1402DH New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 3.4 2.5 rDS(on) (W) 0.077 @ VGS = 4.5 V 0.120 @ VGS = 2.5 V D TrenchFETr Power MOSFET: 2.5-V Rated APPLICATIONS D Load Switch for Portable Applications Product Is Completely Pb-free SOT-363 SC-70 (6-LEADS) D 1 6 5 D Marking Code YY Lot Traceability and Date Code Part # Code AE D XX D 2 G 3 4 S Top View Ordering Information: SI1402DH-T1--E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 30 "12 3.4 2.7 8 1.2 1.45 0.94 Steady State Unit V 2.7 2.2 A 0.8 0.95 0.6 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 73328 S-50527--Rev. A, 28-Mar-05 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 65 87 40 Maximum 85 130 50 Unit _C/W C/W 1 SI1402DH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 2.0 A VDS = 5 V, ID = 3.0 A IS = 1.05 A, VGS = 0 V 4 0.064 0.095 10 0.80 1.1 0.077 0.120 0.6 1.6 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Reverse Recovery Charge Qg Qgs Qgd Rg td(on) tr td(off) tf trr Qrr IF = 1 05 A di/dt = 100 A/ms 1.05 A, VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1.0 MHz VDS = 15 V, VGS = 4.5 V, ID = 2.0 A 3 0.6 1.0 2.4 5 12 13 7 15 7.5 8 23 23 12 25 12 nC ns W 4.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73328 S-50527--Rev. A, 28-Mar-05 SI1402DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 7 I D - Drain Current (A) 6 5 4 3 2 1 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0.5 2V VGS = 5 thru 2.5 V I D - Drain Current (A) 8 7 6 5 4 3 2 1 0 0.0 TC = 125_C 25_C Vishay Siliconix Transfer Characteristics 1.5 V -55_C 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) 450 On-Resistance vs. Drain Current Capacitance r DS(on) - On-Resistance ( W ) 0.4 C - Capacitance (pF) 360 Ciss 270 0.3 0.2 VGS = 2.5 V VGS = 4.5 V 0.0 0 2 4 6 8 10 180 0.1 90 Crss 0 6 Coss 0 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 1 VDS = 15 V ID = 2 A Gate Charge 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3 A 2 3 4 5 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 73328 S-50527--Rev. A, 28-Mar-05 www.vishay.com 3 SI1402DH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.25 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) 0.20 I S - Source Current (A) ID = 3 A 1 TJ = 150_C 0.15 0.10 TJ = 25_C 0.05 0.1 0.00 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) 6 Power (W) 8 Single Pulse Power, Junction-to-Ambient -0.0 4 -0.2 2 -0.4 -0.6 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Case IDM Limited 10 I D - Drain Current (A) *rDS(on) Limited 100 ms 1 ID(on) Limited 0.1 TC = 25_C Single Pulse BVDSS Limited 1 10 1 ms 10 ms 100 ms 10 s, 1 s dc 0.01 0.1 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com Document Number: 73328 S-50527--Rev. A, 28-Mar-05 4 SI1402DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 105_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Foot Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73328. Document Number: 73328 S-50527--Rev. A, 28-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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