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| SEMD4 NPN/PNP Silicon Digital Transistor Array Preliminary data * Switching circuit, inverter, interface circuit, driver circuit * Two (galvanic) internal isolated NPN/PNP Transistors in one package * Built in bias resistor (R1=10k) Tape loading orientation Top View 321 4 5 3 6 1 2 Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 2 B1 3 C2 EHA07176 TR2 R1 456 Direction of Unreeling Type SEMD4 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) 1For calculation of R thJA please refer to Application Note Thermal Resistance WR E1 Marking W7 Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 5 20 100 250 150 -65 ... 150 Unit V mA mW C RthJS 300 K/W 1 Feb-26-2004 SEMD4 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 fT 130 R1 R1/R2 7 0.9 10 1 13 1.1 Vi(on) 0.5 1.1 Vi(off) 0.4 1 VCEsat 0.3 hFE 120 630 ICBO 100 V(BR)CBO 50 V(BR)CEO 50 typ. max. Unit V nA V k MHz pF 1) Pulse test: t < 300s; D < 2% 2 Feb-26-2004 SEMD4 NPN Type DC Current Gain hFE = f (I C) VCE = 5V (common emitter configuration) 10 3 Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20 10 -1 A hFE 10 -2 10 2 IC 10 -3 10 1 -4 10 10 -3 10 -2 A 10 -1 10 -4 0 0.1 0.2 0.3 V 0.5 IC VCEsat Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration) 10 -1 Input off voltage Vi(off) = f (IC ) VCE = 5V (common emitter configuration) 10 -2 A A 10 10 -2 -3 IC IC 10 -4 10 -3 10 -5 10 -4 -1 10 10 0 10 1 V 10 2 10 -6 0 0.5 1 V 2 Vi(on) Vi(off) 3 Feb-26-2004 SEMD4 PNP Type DC Current Gain hFE = f (I C) VCE = 5V (common emitter configuration) 10 3 Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20 10 -1 A hFE 10 -2 10 2 IC 10 -3 10 1 -4 10 10 -3 10 -2 A 10 -1 10 -4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1 IC VCEsat Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration) 10 -1 Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration) 10 -2 A A 10 10 -2 -3 IC IC 10 -4 10 -3 10 -5 10 -4 -1 10 10 0 10 1 V 10 2 10 -6 0 0.5 1 V 2 Vi(on) Vi(off) 4 Feb-26-2004 SEMD4 Total power dissipation P tot = f (TS) 300 mW Ptot 200 150 100 50 0 0 15 30 45 60 75 90 105 120 C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 10 2 Ptotmax/ PtotDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Feb-26-2004 |
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