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RB496EA Diodes Schottky barrier diode RB496EA Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 2.90.1 Each lead has same 0.40.05 dimension 0.1 0.160.1 0.06 Features 1) Small mold type (TSMD5) 2) Low IR 3) High reliability 1.0 min. (5) (4) 0.45 0.35 2.80.2 0.2 0.1 0.7 0.35 0.45 1.6 00.1 0.95 (1) (2) 0.95 (3) 0.330.03 0.70.1 0.850.1 1.0Max 0.30.6 0.95 1.9 TSMD5 Structure Silicon epitaxial planer 0.95 1.90.2 Structure ROHM : TSMD5 dot (year week factory) + day Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.550.05 0.30.1 1.750.1 3.50.05 3.20.08 8.00.2 3.20.08 4.00.1 1.10.1 00.5 5.50.2 3.20.08 1.10.08 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode Electrical characteristic (Ta=25C) Symbol VR Io IFSM Tj Tstg Limits 20 1 10 125 -40 to +125 Unit V A A Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - Typ. - Max. 0.35 0.40 500 Unit V V A Conditions IF=0.5A IF=1A VR=10V Rev.A 2.4 1/3 RB496EA Diodes Electrical characteristic curves 1000 Ta=75 FORWARD CURRENT:IF(mA) 100000 Ta=125 REVERSE CURRENT:IR(uA) 1000 f=1MHz 100 Ta=25 Ta=-25 Ta=75 1000 Ta=25 100 10 1 Ta=-25 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 10000 100 1 0 200 400 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600 10 0 5 10 15 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 20 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 420 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 350 Ta=25 IF=1A n=30pcs 300 Ta=25 IF=0.5A n=30pcs REVERSE CURRENT:IR(uA) 410 400 390 380 AVE:384.2mV 340 330 320 310 300 AVE:319.7mV 250 200 150 100 50 AVE:62.1uA Ta=25 VR=10V n=30pcs 370 VF DISPERSION MAP 0 VF DISPERSION MAP IR DISPERSION MAP 300 290 CAPACITANCE BETWEEN TERMINALS:Ct(pF) PEAK SURGE FORWARD CURRENT:IFSM(A) 50 40 30 20 10 AVE:14.6A 0 Ct DISPERSION MAP IFSM DISRESION MAP Ifsm 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms 280 270 260 250 240 230 220 210 200 AVE:270.5pF Ta=25 f=1MHz VR=0V n=10pcs 25 20 15 10 5 0 1 Ifsm 8.3ms 8.3ms 1cyc 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Ifsm 1 Rth(j-a) Per chip 0.8 FORWARD POWER DISSIPATION:Pf(W) D=1/2 DC 25 20 15 10 5 0 1 t 100 Rth(j-c) Mounted on epoxy board IM=10mA IF=0.5A 0.6 Sin(180) 10 1ms time 0.4 0.2 0 300us 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2 Rev.A 2/3 RB496EA Diodes 1 Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 Per chip 2.5 2 DC 1.5 D=1/2 1 0.5 0 0 5 10 15 20 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Sin( 180) 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 0A 0V Io t VR D=t/T VR=10V Tj=125 Per chip 2.5 2 1.5 1 0.5 Sin(180) 0 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 125 DC D=1/2 0A 0V Io t T VR D=t/T VR=10V Tj=125 0.8 REVERSE POWER DISSIPATION:PR (W) 0.6 0.4 0.2 0 Sin(180) DC D=1/2 Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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