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Datasheet File OCR Text: |
PT495F PT495F s Features 1. Epoxy resin package type 2. Compact 3. Intermediate acceptance ( : TYP. 40 ) 4. Long lead pin type MAX. lead length of 51.5 mm acceptable to order Intermediate Acceptance High Sensitivity Phototransistor s Outline Dimensions 2-C0.5 3.0 R1.250.1 2.8 1.55 1.15 0.75 (Unit : mm) 1.5 ( ) 1.4 2-0.8 (1.7 ) (2-0.6 ) (3.0) ( 18.5 ) 4.0 5 . Visible light cut-off type Visible light cut-off resin (black) s Applications 1. VCRs 2. Optoelectronic switches 2-0.45 + 0.15 - 0.05 43.0 1 2-0.4 - 0.05 + 0.15 (2.54) 2 1 2 2 Collector 1 Emitter 2.8 1 (Note) MAX. lead length of 51.5 mm acceptable to order s Absolute Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol V CEO V ECO IC PC T opr T stg T sol Rating 35 6 50 75 - 25 to +85 - 40 to +85 260 (Ta=25C) Unit V V mA mW C C C *1 1 For 3 seconds at the position of 1.4 mm from the resin edge " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." PT495F s Electro-optical Characteristics Parameter *2 Collector (Ta=25C) Symbol Conditions VCE = 2V, EV = 2 lx IC VCE = 10V, E e = 0 ICEO IC = 0.8mA, V CE(sat) Ee = 1mW/cm2 p tr VCE = 2V, I C = 5mA RL = 100 tf MIN. 0.2 TYP. 860 80 70 40 MAX. 0.8 10 -6 1.0 400 350 Unit mA A V nm s current Dark current saturation voltage *2 Collector-emitter Peak sensitivity wavelength Response time Half intensity angle Rise Fall *2 E v, E e : Illuminance, irradiance by CIE standard light source A (tungsten lamp) Fig. 1 Collector Power Dissipation vs. Ambient temperature 80 Fig. 2 Dark Current vs. Ambient temperature 10 - 4 5 VCE = 10V 10 - 5 5 Collector power dissipation PC ( mW ) 70 60 50 40 30 20 10 0 - 25 (A) CEO 10 - 6 5 10 - 7 5 10 - 8 5 10 - 9 5 10 - 10 5 10 - 11 5 - 25 0 25 50 75 85 100 Dark current I 0 25 50 75 100 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig. 3 Relative Collector Current vs. Ambient temperature 175 VCE = 2V EV = 2 1x Fig. 4 Collector Current vs. Irradiance 50 VCE = 2V T a = 25C Relative collector current (%) 150 125 Collector current I C (mA) 20 10 100 5 75 2 50 - 25 0 25 50 75 100 1 2 5 10 - 1 2 5 1 Ambient temperature Ta (C) Irradiance E e ( mW/cm 2) PT495F Fig. 5 Collector Current vs. Collector-emitter voltage 50 45 T a = 25C 80 Fig. 6 Spectral Sensitivity 100 T a = 25C Collector current I C (mA) 40 35 30 25 20 15 10 5 0 0 1 PC (MAX.) 0.25mW/cm2 0.2mW/cm 2 Relative sensitivity (%) 5 6 7 Ee = 0.5mW/cm2 60 40 0.15mW/cm2 0.1mW/cm2 2 3 4 20 0 500 600 700 Collector-emitter voltage VCE (V) Wavelength (nm) 800 900 1000 1100 1200 Fig. 7 Response Time vs. Load Resistance 1000 VCE = 2V IC = 5mA T a = 25C Test Circuit for Response Time Response time ( s) 100 tr tf Output Input td 10 ts VCC RL 90% Output td tr ts tf 10% 1 10 Load resistance R L ( ) 100 1000 5000 Fig. 8 Radiation Diagram - 20 - 10 0 100 - 30 ( Ta = 25C) + 10 + 20 Fig. 9 Collector-emitter Saturation Voltage vs. Irradiance (V) 2.2 T a = 25C 2.0 1.8 IC = 0.5mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 + 30 CE ( sat ) Relative sensitivity (%) 80 Collector-emitter saturation voltage V 1mA 2mA 3mA - 40 60 + 40 - 50 - 60 - 70 - 80 - 90 40 + 50 + 60 20 + 70 + 80 Angular displacement 0 + 90 Irradiance Ee ( mW/cm 2) q Please refer to the chapter "Precautions for Use". (Page 78 to 93) 5mA |
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