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| MRF901 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF901 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.5 GHz. PACKAGE STYLE Dim. Are in mm FEATURES: * Low Noise Figure * High Gain * Common Emitter MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 30 mA 25 V 15 V 2.0 V 0.375 W @ TC = 75 C -55 C to +150 C -55 C to +150 C 200 C/W Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE Ccb fT NFMIN TC = 25 C NONETEST CONDITIONS IC = 0.1 mA IC = 1.0 mA IE = 0.1 mA VCB = 15 V VCE = 5.0 V VCB = 10 V VCE = 10 V VCE = 6.0 V IC = 15 mA IC = 15 mA IC = 5.0 mA f = 1.0 MHz f = 1.0 GHz f = 1.0 GHz MINIMUM TYPICAL MAXIMUM 25 15 2.0 50 30 80 0.40 4.5 2.0 2.5 200 1.0 UNITS V V V nA --pF GHz dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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