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| MITSUBISHI SEMICONDUCTOR MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 2MIN (1) 0.6+/-0.15 FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 14 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Min.) @Po=32dBm S.C.L. R1.2 17.4+/-0.3 8.0+/-0.2 (2) 2MIN (3) 20.4+/-0.2 13.4 0.1 1.4 injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. APPLICATION item 01 : 3.4 - 3.6 GHz band power amplifier item 51 : 3.4 - 3.6 GHz band digital radio communication QUALITY GRADE IG 4.0+/-0.4 RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 4.5 (A) RG=25 (ohm) GF-18 (1): GATE (2): SOURCE (FLANGE) (3): DRAIN ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1 (Ta=25deg.C) Ratings -15 -15 15 -40 84 78.9 175 -65 / +175 Unit V V A mA mA W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. IM3 Rth(ch-c) (Ta=25deg.C) Test conditions VDS = 3V , VGS = 0V VDS = 3V , ID = 4.4A VDS = 3V , ID = 80mA Min. 41.5 VDS=10V, ID(RF off)=4.5A, f=3.4 - 3.6GHz 12 Limits Typ. 11 4 42.5 14 4.5 37 -45 Unit Max. -4.5 1.9 A S V dBm dB A % dBc deg.C/W Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *1 *2 -42 delta Vf method - *1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=3.6GHz, delta f=5MHz *2 : Channel-case MITSUBISHI ELECTRIC 2.4+/-0.2 June/2004 15.8 MITSUBISHI SEMICONDUCTOR MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 |
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