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| Schottky Barrier Diodes (SBD) MA3Z793 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features * Two MA3Z792s diodes (series connection) are contained in the Smini type 3-pin package * Allowing to rectify under (IF(AV) = 100 mA) condition * Optimum for high-frequency rectification because of its short reverse recovery time (trr) * Low VF (forward rise voltage), with high rectification efficiency 2.1 0.1 0.425 1.25 0.1 0.425 + 0.1 2.0 0.2 1.3 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Series*2 Single Series*2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 100 70 1 125 -55 to +125 A mA Unit V V mA 0.9 0.1 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 EIAJ : SC-70 Flat S-Mini Type Package(3-pin) Marking Symbol: M4A Internal Connection 1 Non-repetitive peak forward surge current*1 Junction temperature Storage temperature C C 2 3 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 20 2 Conditions Min Typ Max 15 0.55 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.15 - 0.05 + 0.1 0.3 - 0 1 MA3Z793 IF V F 103 Schottky Barrier Diodes (SBD) VF Ta 1.0 104 IR VR 102 75C 25C Forward current IF (mA) Reverse current IR (A) 0.8 103 Ta = 125C 102 75C 10 25C 1 10 Ta = 125C - 20C Forward voltage VF (V) 0.6 1 0.4 IF = 100 mA 10-1 0.2 10 mA 3 mA 10-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 10-1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 24 f = 1 MHz Ta = 25C IR T a 104 Terminal capacitance Ct (pF) 20 103 Reverse current IR (A) 16 VR = 30 V 102 3V 1V 12 10 8 4 1 0 0 5 10 15 20 25 30 10-1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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