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| Schottky Barrier Diodes (SBD) MA2D755 Silicon epitaxial planar type Unit : mm For switching power supply 9.9 0.3 4.6 0.2 13.7 0.2 4.2 0.2 * TO-220D Package * Allowing to rectify under (IF(AV) = 5 A) condition * VR = 60 V guaranteed * Single type 15.0 0.5 I Features 3.2 0.1 1.5 - 0.4 +0 3.0 0.5 2.9 0.2 2.6 0.1 1.4 0.2 0.8 0.1 I Absolute Maximum Ratings Ta = 25C Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 60 5 90 -40 to +125 -40 to +125 Unit V A A C C 0.55 0.15 5.08 0.5 2.54 0.3 1 2 1 : Cathode 2 : Anode TO-220D Package (2-pin) Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Thermal resistance Symbol IR VF Rth(j-c) VR = 60 V IF = 5 A Direct current (between junction and case) Conditions Min Typ Max 3 0.58 3 Unit mA V C/W Note) Rated input/output frequency: 150 kHz 1 MA2D755 IF V F 102 102 Schottky Barrier Diodes (SBD) IR V R 600 Ct VR Ta = 125C 10 10 25C 75C 1 Terminal capacitance Ct (pF) Ta = 125C 500 Reverse current IR (mA) Forward current IF (A) 400 1 300 10-1 10-1 25C 10-2 200 10-2 100 10-3 0 0.2 0.4 0.6 0.8 1.0 1.2 10-3 0 10 20 30 40 50 60 0 0 10 20 30 40 50 60 Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V) 2 |
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