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| KSB906 KSB906 Low Frequency Power Amplifier * Low Collector- Emitter Saturation Voltage * Complement to KSD1221 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Value - 60 - 60 -7 -3 - 0.5 20 1 150 - 55 ~ 150 Units V V V A A W W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC = - 50mA, IB = 0 VCB = - 60V, IE = 0 VEB = - 7V, IC = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.1A VCE = - 5V, IC = - 0.5A VCB = - 10V, f = 1MHz VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL = 30 60 20 -1 -1 9 150 0.4 1.7 0.5 Min. - 60 Typ. Max. - 100 - 100 200 - 1.7 - 1.5 V V MHz pF s s s Units V A A hFE Classification Classification hFE O 60 ~ 120 Y 100 ~ 200 (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB906 Typical Characteristics -5.0 -4.5 1000 EMITTER COMMON TC=25 0m A A 70m IB=- VCE=-5V IC(A), COLLECTOR CURRENT -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -0.0 -0.0 1 -0.01 -8 IB= hFE, DC CURRENT GAIN 100 IB=-60mA IB=-50mA IB=-40mA IB=-30mA IB=-20mA IB=-10mA 10 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -0.1 -1 -10 V CE(V), COLLECTOR-EMITTER VOLTAGE IC(mA), COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -3.0 IC =10IB VCE =-5V -2.5 VCE(SAT)(V), SATURATION VOLTAGE IC(A), COLLECTOR CURRENT -1 -2.0 -1.5 -0.1 -1.0 -0.5 -0.01 -0.01 -0.1 -1 -10 -0.0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC(A), COLLECTOR CURRENT VBE (V), BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -10 32 IC MAX (PULSE) 28 ms 10 s 1m 0m 10 IC(A), COLLECTOR CURRENT IC MAX DC PD(W), POWER DISSIPATION 24 20 16 12 8 4 0 -1 DC s -0.1 -1 -10 -100 0 25 50 75 100 125 150 175 VCE(V). COLLECTOR EMITTER VOLTAGE TC(), CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB906 Package Demensions I-PAK 6.60 0.20 5.34 0.20 (0.50) (4.34) (0.50) 0.50 0.10 2.30 0.20 0.20 0.20 0.60 0.70 0.10 6.10 0.20 0.80 0.20 1.80 MAX0.96 0.76 0.10 9.30 0.30 2.30TYP [2.300.20] 2.30TYP [2.300.20] 0.50 0.10 (c)2001 Fairchild Semiconductor Corporation 16.10 0.30 Dimensions in Millimeters Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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