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| SEMICONDUCTOR TECHNICAL DATA INVERTER (UNBUFFER) KIC7SZU04FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT FEATURES High Output Drive : 16mA (Typ.) @VCC=4.5V 1 B B1 5 Super High Speed Operation : tPD=2.4ns(Typ.) @VCC=5V, 50pF Operation Voltage Range : VCC(opr)=1.8 5.5V. A1 C Supply Voltage Data Retention : VCC=1.5 5.5V. 2 3 4 D H T G DIM A A1 B B1 C D G H T MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 A MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Supply Voltage Range DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC Output Current DC VCC/Ground Current Power Dissipation Storage Temperature Lead Temperature (10s) ) RATING -0.5 -0.5 6 6 UNIT V V V mA mA mA mA mW SYMBOL VCC VIN VOUT IIK IOK IOUT ICC PD Tstg TL C USV -0.5 VCC+0.5 20 20 50 50 200 -65 150 260 MARKING Type Name TN PIN CONNECTION (TOP VIEW) VCC 5 OUT Y 4 1 NC 2 IN A 3 GND 2002. 10. 14 Revision No : 1 1/3 KIC7SZU04FU LOGIC DIAGRAM IN A 1 OUT Y DC ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL TEST CONDITION Ta=25 VCC (V) 1.8 High-Level Input Voltage VIH 2.3 5.5 1.8 2.7 3.0 5.5 1.8 IOH=-100 A High-Level Output Voltage 2.3 3.0 4.5 IOH=-4mA IOH=-8mA IOH=-12mA IOH=-16mA 2.3 3.0 3.0 4.5 1.8 IOL=100 A Low-Level Output Voltage 2.3 3.0 4.5 IOL=4mA IOL=8mA IOL=12mA IOL=16mA Input Leakage Current Quiescent Supply Current IIN ICC VIN=5.5V or GND VIN=VCC or GND 0 2.3 3.0 3.0 4.5 5.5 5.5 MIN. 0.85 VCC 0.8 VCC 1.6 2.1 2.7 4.0 1.9 2.4 2.3 3.8 TYP. 1.8 2.3 3.0 4.5 2.14 2.75 2.61 4.13 0 0 0 0 0.1 0.17 0.25 0.26 2 MAX. 0.15 VCC 0.2 VCC 0.2 0.2 0.3 0.5 0.3 0.4 0.55 0.55 1 Ta=-40 MIN. 0.85 VCC 0.8 VCC 1.6 2.1 2.7 4.0 1.9 2.4 2.3 3.8 85 MAX. V 0.15 VCC 0.2 VCC 0.2 0.2 0.3 0.5 0.3 0.4 0.55 0.55 10 20 A V V UNIT Low-Level Input Voltage VIL - V VOH VIN=VIL VOL VIN=VIH 2002. 10. 14 Revision No : 1 2/3 KIC7SZU04FU AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns) CHARACTERISTIC SYMBOL TEST CONDITION Ta=25 VCC (V) 1.8 CL=15pF, Propagation Delay Time tPLH tPHL CL=50pF, RL=500 Input Capacitance Power Dissipation Capacitance CIN CPD (Note 1) 3.5 9.5 RL=1M 2.5 3.3 5.0 3.3 5.0 0 0.2 0.3 0.5 0.3 0.5 5.5 3.3 MIN. 1.0 0.8 0.5 0.5 1.0 0.8 TYP. 4.5 6.3 MAX. 8.5 6.2 4.5 3.9 6.0 5.0 Ta=-40 MIN. 1.0 0.8 0.5 0.5 1.5 0.8 85 MAX. 9.0 6.5 4.8 ns 4.1 6.5 5.5 pF UNIT Note 1 : CPD defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit.) Average operating current can be obtained by the equation hereunder. ICC(opr)=CPD VCC fIN+ICC 2002. 10. 14 Revision No : 1 3/3 |
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