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| TOSHIBA VARIABLE CAPACITANCE DIODE JDV4P08U SILICON EPITAXIAL PLANAR TYPE **@VCO FOR UHF BAND RADIO *oe Small Package *@ *oe Ultra Low Series Resistance : rs = 0.30 (Typ.) *@ P Q 2.0*}0.2 1.3*}0.1 Unit in ** 2.1 *}0.1 1.25 *}0.1 S R MAXIMUM RATINGS(Ta = 25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING UNIT 10 V 125 *Z *|55 * 125 *Z *{0.05 0.95*|0.15 0~0.1 PD@ *d m c n * P Q Q D *mc nd *snd@ RD Q bc g* p r t *snd@ SD P bc g* JEDEC EIAJ TOSHIBA ELECTRICAL CHARACTERISTICS (Ta=25*Z ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Voltage VR IR = 1 EA Reverse Current IR VR = 10 V Capacitance C1V VR = 1 V *C = f 1 MHz Capacitance C4V VR = 4 V *C = f 1 MHz Capacitance Ratio C1V*^C4V *| f Series Resistance rs VR = 1 V *C = 470 MHz 1-2U1A MIN. 10 *| 17.3 5.3 2.8 *| TYP. *| *| 18.3 6.1 3.0 0.3 MAX. *| 3 19.3 6.6 *| 0.5 UNIT V nA pF pF *| Marking S R *E P su Q 0.15*} 05 0. 0.7 *{0.1 0.2*|0.05 |
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