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Not for new designs Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, T J = 125C, RG = 82 Clamped inductive load, L = 100 H VGE = 15 V, V CE = 360 V, TJ = 125C RG = 82 , non repetitive TC = 25C Maximum Ratings 600 600 20 30 40 20 80 ICM = 40 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A A s W C C C VCES IXSH 20 N60U1 IXSH 20 N60AU1 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features International standard package JEDEC TO-247 AD High frequency IGBT with guaranteed Short Circuit SOA capability IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity q q q q q q 1.13/10 Nm/lb.in. 6 300 g C Applications Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 3.5 TJ = 25C TJ = 125C 6.5 500 8 100 20N60U1 20N60AU1 2.5 3.0 V V A mA nA V V q q q q BVCES VGE(th) ICES I GES VCE(sat) IC IC = 1.75 mA, VGE = 0 V = 1.5 mA, VCE = VGE q AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages q q q q Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density 91770D (4/96) IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSH 20N60U1 IXSH 20N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 7 65 1800 VCE = 25 V, VGE = 0 V, f = 1 MHz 250 45 90 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES , RG = 39 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES , RG = 39 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher T J or increased RG 20N60U1 20N60AU1 20N60U1 20N60AU1 9 3 40 65 100 200 450 20N60U1 20N60AU1 350 2.5 100 200 1 1000 1000 600 5 120 55 80 S A pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-247 AD Outline gfs IC(on) Cies Coes Cres Qg Q ge Q gc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VGE = 15 V, VCE = 10 V 0.83 K/W 0.25 K/W Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 10 150 35 V A ns ns IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF /dt = 240 A/s VR = 360 V TJ = 125C IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 25C 50 1 K/W IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXSH 20N60U1 IXSH 20N60AU1 Fig. 1 Saturation Characteristics 40 TJ = 25C VGE = 15V Fig. 2 70 TJ = 25C Output Characterstics 13V 60 VGE =15V 30 IC - Amperes IC - Amperes 50 40 30 20 11V 13V 20 11V 10 9V 10 7V 9V 7V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 9 8 7 TJ = 25C Fig. 4 1.7 Temperature Dependence of Output Saturation Voltage IC = 40A VCE(sat) - Normalized IC = 10A IC = 20A IC = 40A 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 V GE = 15V VCE - Volts 6 5 4 3 2 1 0 8 9 10 11 12 13 14 15 I C = 20A IC = 10A -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C Fig. 5 Input Admittance 40 VCE = 10V 1.3 Fig. 6 Temperature Dependence of Breakdown and Threshold Volt. BV / VGE(th) - Normalized 35 30 1.2 BVCES IC = 3mA IC - Amperes 25 20 15 TJ = 125C 1.1 1.0 0.9 VGE(th) IC = 1.5mA 0.7 10 5 0 5 6 7 8 9 T J = 25C T J = - 40C 0.8 10 11 12 13 14 15 -50 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSH 20N60U1 IXSH 20N60AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 600 500 TJ = 125C RG = 22 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 6 5 600 500 T J = 125C IC = 20A tfi (-A) hi-speed 6 5 4 3 E off (-A) hi-speed tfi - nanoseconds tfi - nanoseconds Eoff - millijoules 400 300 200 100 0 tfi (-A) hi-speed Eoff (-A) hi-speed 4 3 2 1 0 400 300 200 100 0 2 1 0 0 10 20 30 40 0 20 40 60 80 100 120 IC - Amperes Rg - Ohms Fig.9 Gate Charge Characteristic Curve 15 12 9 6 3 0 IC = 20A VCE = 300V Fig.10 100 Turn-Off Safe Operating Area TJ = 125C 10 RG = 10 dV/dt < 6V/ns IC - Amperes VGE - Volts 1 0.1 0.01 0 25 50 75 100 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse D = Duty Cycle 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Eoff - millijoules IXSH 20N60U1 IXSH 20N60AU1 Fig.12 Maximum Forward Voltage Drop Recovery Time tfr 100 80 TJ = 150C Fig.13 25 20 Peak Forward Voltage VFR and Forward 1000 800 VFR T J = 125C IF = 37A Current - Amperes 60 40 20 0 0.5 T J = 100C 15 10 5 tfr 600 400 200 0 600 TJ = 25C 0 1.0 1.5 2.0 2.5 0 100 200 300 400 500 Voltage Drop - Volts diF /dt - A/s Fig.14 Junction Temperature Dependence off IRM and Qr 1.4 1.2 1.0 0.8 IRM Fig.15 4 TJ = 100C VR = 350V Reverse Recovery Chargee Qr - nanocoulombs Normalized IRM /Qr 3 IF = 30A max. 2 typ. IF = 60A 0.6 0.4 0.2 0.0 0 Qr 1 IF = 30A IF = 15A 0 40 80 120 160 1 10 100 1000 TJ - Degrees C diF /dt - A/s Fig.16 Peak Reverse Recovery Current 40 TJ = 100C VR = 350V IF = 30A max. Fig.17 0.8 IF = 30A max. Reverse Recovery Time T J = 100C VR = 350V trr - nanoseconds 30 0.6 typ. IF = 60A IRM - Amperes typ. IF = 60A 20 IF = 30A IF = 15A 0.4 IF = 30A IF = 15A 10 0.2 0 200 400 600 0.0 0 200 400 600 diF /dt - A/s diF /dt - A/s IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 tfr - nanoseconds VFR - Volts IXSH 20N60U1 IXSH 20N60AU1 Fig.18 Diode Transient Thermal resistance junction to case 1.00 RthJC - K/W 0.10 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds |
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