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FDN359BN
January 2006
FDN359BN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild's Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features * 2.7 A, 30 V.
RDS(ON)= 0.046 @ VGS = 10 V RDS(ON)= 0.060 @ VGS = 4.5 V
* Very fast switching speed. * Low gate charge (5nC typical) * High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.
D
D
S
G S
SuperSOT -3
TM
G
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage
Parameter
Ratings
30 20
(Note 1a)
Units
V V A
Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation Operating and Storage Temperature Range
2.7 15 0.5 0.46 -55 to +150
(Note 1a) (Note 1b)
W C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
C/W C/W
Package Marking and Ordering Information
Device Marking 359B Device FDN359BN Reel Size 7'' Tape width 8mm Quantity 3000 units
(c)2006 Fairchild Semiconductor Corporation
FDN359BN Rev A(W)
FDN359BN
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min
30
Typ
Max
Units
V
Off Characteristics
ID = 250 A,Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V TJ = -55 C VDS = 0 V
O
21 1 10 100
mV/C A A nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C ID = 2.7 A VGS = 10 V, ID = 2.4 A VGS = 4.5 V, VGS = 10 V, ID = 2.7 A, TJ = 125C VGS = 10 V, VDS = 5 V VDS = 5V, ID = 2.7 A
1
1.8 -4 0.026 0.032 0.033
3
V mV/C
0.046 0.060 0.075
ID(on) gFS
15 11
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz f = 1.0 MHz
V GS = 0 V,
485 105 65 1.8
650 140 100
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15V, VGS = 10 V,
ID = 1 A, RGEN = 6
7 5 20 2
14 10 35 4 7
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 5 V
ID = 2.7 A,
5 1.3 1.8
FDN359BN Rev A(W)
FDN359BN
Electrical Characteristics
Symbol
IS VSD trr Qrr
TA = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
0.42
Units
A V ns nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 0.42 A
(Note 2)
0.7 12 3
1.2 20 5
IF = 2.7A, diF/dt = 100 A/s
otes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper.
b) 270C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDN359BN Rev A(W)
FDN359BN
Typical Characteristics
15 VGS = 10V 12 ID, DRAIN CURRENT (A)
2.6
3.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 3.0V
2.2
4.5V
4.0V
9 3.0V 6
1.8
1.4
3.5V 4.0V 4.5V 5.0V 6.0 10.0V
3 2.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5
1
0.6 0 3 6 9 ID, DRAIN CURRENT (A) 12 15
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.08 RDS(ON), ON-RESISTANCE (OHM)
1.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 2.7A VGS = 10V
ID = 1.35A
1.1
0.06
1
TA = 125oC 0.04
0.9
TA = 25 C 0.02
o
0.8 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
15
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
VGS = 0V
10 1 0.1
TA = 125 C
o
ID, DRAIN CURRENT (A)
12
9
6
TA = 125 C
o
-55 C
o
0.01 0.001 0.0001
25 C -55 C
o
o
3
25oC
0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4
0
0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDN359BN Rev A(W)
FDN359BN
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
800
ID = 2.7A f = 1MHz VGS = 0 V VDS = 10V 20V
8
CAPACITANCE (pF)
600
Ciss
6
15V
4
400
200
2
Coss
Crss
0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics.
100
Figure 8. Capacitance Characteristics.
30 P(pk), PEAK TRANSIENT POWER (W) 25 20 15 10 5 0 0.001
SINGLE PULSE RJA = 270C/W TA = 25C
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT 1ms 10ms 100ms 1s DC VGS = 10V SINGLE PULSE o RJA = 270 C/W TA = 25 C
o
100s
1
0.1
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 270 C/W
0.1
0.1 0.05 0.02 0.01
P(pk) t1
SINGLE
0.01
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDN359BN Rev A(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3
SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18

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