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 UTC D45H2
PNP EXPITAXIAL SILICON TRANSISTOR
PNP EXPITAXIAL SILICON TRANSISTOR
DESCRIPTION
The UTC D45H2 is a general purpose power application and switching.
FEATURE
*Low Collector-Emitter Saturation Voltage VCE(sat)=-1v(MAX)@-15A *Fast Switching Speeds
1
TO-220
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS(Ta=25C)
PARAMETER
Collector to Emitter Voltage Emitter To Base Voltage Collector Current(DC) Collector Dissipation(Tc=25C) Collector Dissipation(Ta=25C) Junction Temperature Storage Temperature *PW<=10mS,Duty Cycle<=50%
SYMBOL
VCEO VEBO IC Pc Pc Tj Tstg
VALUE
-30 -5 -10 50 1.67 150 -55 ~ +150
UNIT
V V A W W C C
ELECTRICAL CHARACTERISTICS(Ta=25C)
PARAMETER
Collector Cutoff Current Emitter Cutoff current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time
SYMBOL
ICES IEBO VCE(SAT) VBE(SAT) hFE1 FT CCB ton tstg tf
TEST CONDITIONS
VCE=Rated ; VCEO,VEB=0 VEB=-5V,Ic=0 IC=-10A,IB=-0.1A IC=-10A,IB=-1A IC=-10A,VCE=-1V VCE=-10V,IC=-0.5A VCB=-10V,f=1MHZ Ic=-5A,IB=-0.5A IB=-0.5A
MIN
TYP
MAX
-10 1 -1 -1.5
UNIT
A A V V MHZ PF nS nS nS
100 40 230 135 500 100
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R203-003,B
UTC D45H2
PNP EXPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN 100
TYPICAL CHARACTERISTION
POWER DERATING
POWER DISSIPATION, P D (WATTS)
50 45 40 35 30 25 20 15 10 5 0 0 25 75 100 50 TEMPERATURE, Tc () 125 150 0.01 0.05 0.1 0.2 0.5 1 2
DC CURRENT GAIN, hFE
VCE = 1V TJ = 25
80
60
40
20
5
10
COLLECTOR CURRENT, IC (AMP)
DC CURRENT GAIN 200 VCE = 1V TJ = 25
VOLTAGE, V (VOLTS)
"ON" VOLTAGES 5.0 2.0 1.0 0.5 0.2 0.1 0.05 VCE(sat)@IC/IB =10 VBE(sat)@IC/IB =10 TJ = 25
DC CURRENT CAIN, hFE
160
120
80
40
0 0.01
0.05
0.1
0.2
0.5
1
2
5
10
0.01 0.1
0.2
0.5
1.0
2.0
5.0
10
20
COLLECTOR CURRENT, I C (AMP)
COLLECTOR CURRENT, IC (AMP)
FORWARD BIAS SAFE OPERATING AREA TC<70 Duty Cycle<50%
COLLECTOR CURRENT, IC (Amp)
20 10 5.0 2.0 1.0 0.5 0.2 0.1 1
D45H1,2 D45H4,5 D45H7,8,9 D45H10,11,12
DC
1s 10s 100s 1ms
100 50 10 20 5 2 COLLECTOR EMITTER VOLTAGE, VCE (VOLTS)
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R203-003,B
UTC D45H2
PNP EXPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
3
QW-R203-003,B


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