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| CYStech Electronics Corp. High Frequency NPN Epitaxial Planar Transistor Spec. No. : C213S3 Issued Date : 2003.04.25 Revised Date : Page No. : 1/3 BTC5179S3 Description The BTC5179S3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline BTC5179S3 SOT-323 BBase CCollector EEmitter Features * Low current consumption and high gain: S21e = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz S21e = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz * Super mini-mold package Applications * Low noise and high gain amplifiers & Oscillator buffer amplifiers Absolute Maximum Ratings (TA=25) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC Pd Tj Tstg Limits 3 5 2 10 30 150 -65~+150 Unit V V V mA mW C C BTC5179S3 CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics (TA=25C) Parameters Collector Cutoff Current Emitter Cutoff Current DC Current Gain Cutoff Frequency Noise Figure Insertion Gain |S21e|2 in 50 system Output Capacitance Conditions VCB =3V, IE=0 VEB =1V VCE =2V, IC =7mA (Note 1) VCE =2V, IC =7mA, f =2GHz VCE =1V, IC =5mA, f =2GHz VCE =2V, IC =3mA, f =2GHz VCE =1V, IC =3mA, f =2GHz VCE =2V, IC =7mA, f =2GHz VCE =1V, IC =5mA, f =2GHz VCB =2V, IE=0, f = 1MHz Symbol ICBO IEBO hFE fT NF |S21e| 2 Cob Min 70 10 8.5 - Spec. No. : C213S3 Issued Date : 2003.04.25 Revised Date : Page No. : 2/3 Typ. 12 10 1.5 1.5 12 11 0.7 Max 100 100 140 15.5 13 2.0 2.0 1.0 Unit nA nA GHz GHz dB dB dB dB pF Note 1: Pulse test: Pulse width 380s, duty cycle 2%. BTC5179S3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C213S3 Issued Date : 2003.04.25 Revised Date : Page No. : 3/3 3 A Marking: A1 Q Lp detail Z W B C 1 e1 e D bp 2 TE T1 E A Z He 0 1 scale 2 mm 3-Lead SOT-323 Pastic Surface Mounted Package CYStek Package Code: S3 v A Style: Pin 1.Base 2.Emitter 3.Collector *: Typical DIM A A1 bp C D E e Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC5179S3 CYStek Product Specification |
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